Shanhui Fan and Zetian Mi
Phys. Rev. Applied 19, 050001 (2023) - Published 17 May, 2023
Guest Editors Shanhui Fan and Zetian Mi reflect on the Collection upon its closing.
Andrei Stankevych, Rishabh Saxena, Alexander Vakhnin, Falk May, Naomi Kinaret, Denis Andrienko, Jan Genoe, Heinz Bässler, Anna Köhler, and Andrey Kadashchuk
Phys. Rev. Applied 19, 054007 (2023) - Published 2 May, 2023
Injected or photogenerated charge carriers in disordered organic semiconductors relax in energy to form an occupied density of states (ODOS) that is inherently difficult to probe. Thus little is known about nonequilibrium ODOS properties, although they are important in e.g. solar cells and LEDs. This work presents an optical technique for monitoring the ODOS distribution of relaxed charge carriers at low temperatures. The distribution that forms under nonequilibrium conditions is always narrower than that of the full DOS, in a universal ratio of about 2/3 that is reproduced by kinetic Monte Carlo simulations assuming spatially correlated disorder.
Nathan R. Gemmell, Jefferson Flórez, Emma Pearce, Olaf Czerwinski, Chris C. Phillips, Rupert F. Oulton, and Alex S. Clark
Phys. Rev. Applied 19, 054019 (2023) - Published 5 May, 2023
Sensing with undetected photons is a fascinating technique that allows imaging at wavelengths outside a particular detector’s range—enabling, for example, biological imaging without perturbing live cells. In this interference technique, performance can be very sensitive to both sample transmission and losses. This study shows that by balancing the nonlinear interferometer’s arms, one can completely recover fringe visibility caused by signal loss. Moreover, intentional unbalancing offers a reduced-interaction regime where the detected power can be 200 times higher than the power reaching the sample, for ultrasensitive midinfrared sensing well below the conventional noise floor.
M. Hinderling, D. Sabonis, S. Paredes, D.Z. Haxell, M. Coraiola, S.C. ten Kate, E. Cheah, F. Krizek, R. Schott, W. Wegscheider, and F. Nichele
Phys. Rev. Applied 19, 054026 (2023) - Published 8 May, 2023
Measurement and coherent manipulation of Andreev bound states (ABSs) in planar superconductor-semiconductor heterostructures could enable gate-controllable, small-footprint superconducting spin qubits with long coherence times. So far, readout capabilities and device coherence have been limited by lossy substrates, but here researchers overcome this limitation with a flip-chip approach to microwave experiments on ABSs. Superconductor-semiconductor devices and microwave resonators are placed on different chips and inductively coupled via a vacuum gap, enabling high-quality readout without sacrificing device properties.
Han Liu, Xueqin Huang, Mou Yan, Jiuyang Lu, Weiyin Deng, and Zhengyou Liu
Phys. Rev. Applied 19, 054028 (2023) - Published 9 May, 2023
Long-range couplings beyond the nearest neighbors can trigger exotic topological phases in metamaterials but have been overlooked in many topological models. The authors study the effect of the long-range couplings on the topological properties, and demonstrate that a Su-Schrieffer-Heeger model including the third nearest coupling, implemented by acoustic metamaterials, can lead to topological phases of large winding numbers. The experimental results show additional topological end states and rotonlike dispersions for sound waves, highlighting the potential of these long-range metamaterials in creating rich topological features.
K.D. Osborn and W. Wustmann
Phys. Rev. Applied 19, 054034 (2023) - Published 10 May, 2023
Reversible computing exploits thermodynamic principles to replace irreversible Boolean logic with higher-efficiency reversible logic, and could change the future of computers. How best to implement reversible gates and architectures remains an open problem. Superconducting hardware features negligible intrinsic damping, which allows for exploration of many digital circuit types with varying degrees of reversibility. This study simulates Josephson junctions, where single flux quanta serve as bits in this logic type, with the goal of replacing an irreversible shift-register memory. The authors find that asynchronous access, and therefore simpler architecture, is possible.
Hamed Pezeshki, Pingzhi Li, Reinoud Lavrijsen, Martijn Heck, Erwin Bente, Jos van der Tol, and Bert Koopmans
Phys. Rev. Applied 19, 054036 (2023) - Published 10 May, 2023
This paper provides a key solution for integrating spintronic memories with photonic integrated circuits, for all-optical switching and reading of nanoscale magnetic bits. Problems associated with nonlinear absorption and the intrinsically weak magneto-optical effect are solved by a hybrid scheme, exploiting plasmonic and photonic resonators. Thus the authors have developed a device concept that paves the way toward ultrafast, energy-efficient advanced on-chip applications.
Martí Gutierrez Latorre, Gerard Higgins, Achintya Paradkar, Thilo Bauch, and Witlef Wieczorek
Phys. Rev. Applied 19, 054047 (2023) - Published 12 May, 2023
The authors present a platform for quantum experiments on levitated particles with masses ranging from nanograms to micrograms. They exploit the Meissner effect to magnetically levitate superconducting microparticles on a chip, in vacuum at ultralow temperatures. Integrated magnetic readout enables coupling to superconducting quantum circuits. This platform allows for precise measurements of force and acceleration, with potential applications in sensing, including the search for dark matter.
Peng Ye, Wei Chen, Guo-Wei Zhang, Feng-Yu Lu, Fang-Xiang Wang, Guan-Zhong Huang, Shuang Wang, De-Yong He, Zhen-Qiang Yin, Guang-Can Guo, and Zheng-Fu Han
Phys. Rev. Applied 19, 054052 (2023) - Published 16 May, 2023
Lithium niobate (LN) devices have been widely adopted in systems for quantum key distribution (QKD), but the photorefractive effect in LN devices can be exploited as a potential loophole for malicious attacks by eavesdroppers. This work points out a vulnerability of LN devices of which manufacturers and users must become aware, so that appropriate countermeasures may be implemented. Moreover, the physical mechanism and techniques introduced in this work open an important avenue to the security analysis of QKD systems.
Baoying Dou, Stefano Falletta, Jörg Neugebauer, Christoph Freysoldt, Xie Zhang, and Su-Huai Wei
Phys. Rev. Applied 19, 054054 (2023) - Published 16 May, 2023
Understanding nonradiative recombination is important for improving semiconductor devices. For Cu(In,Ga)Se (CIGS) solar cells, antisite defects have long been considered the main recombination centers, yet the underlying mechanism has remained elusive. Here first-principles calculations show that these “killer centers” themselves cannot capture holes efficiently for effective recombination. However, internal conversion to the distorted neutral DX center does open an efficient hole-capture pathway, and DX’s stability in CIGS increases with Ga concentration, which resolves the longstanding issue of why the efficiency of CIGS solar cells decreases at high Ga concentration.
Qiankun Li, Shun Wang, Jinshuo Xue, Ziwen Zhou, Yiqi Hu, Zhou Zhou, Zhijian Feng, Qingyu Yan, Yiqing Yu, Yuyan Weng, Rujun Tang, Xiaodong Su, Fengang Zheng, Liang Fang, and Lu You
Phys. Rev. Applied 19, 054055 (2023) - Published 16 May, 2023
Ionic migration in solid phases is actively explored as a mechanism for neuromorphic computing elements, for example, but direct imaging of the ionic migration and its correlation with macroscopic electronic transport are tricky. Through multiple state-of-the-art microscopy techniques the authors visualize Ag migration in AgBiPSe, and how it modulates the interfacial barrier to induce switchable diodelike transport in a device. Illuminating the device can be used to switch off its ionic tunability, expanding its functionality. These results provide direct insight into the mechanism of ion-mediated transport in ionically active semiconductors.
Maaike Rump, Uddalok Sen, Roger Jeurissen, Hans Reinten, Michel Versluis, Detlef Lohse, Christian Diddens, and Tim Segers
Phys. Rev. Applied 19, 054056 (2023) - Published 17 May, 2023
“Ugh, not again! Something’s wrong with this printer…” In inkjet printing the nozzles in the printhead have intermittent idle periods, during which the ink can evaporate from the nozzle exit. Inks are usually multicomponent, and each component has its own characteristic evaporation rate, resulting in concentration gradients within the ink that can alter the jetting process. Through experiments, analytical modeling, and numerical simulations, the authors unravel the complex physicochemical hydrodynamics associated with the drying of ink at a printhead nozzle.
Joshua Ziegler, Florian Luthi, Mick Ramsey, Felix Borjans, Guoji Zheng, and Justyna P. Zwolak
Phys. Rev. Applied 19, 054077 (2023) - Published 24 May, 2023
Single electrons trapped on semiconductor-defined quantum dots (QDs) are a promising platform for large-scale quantum computing. The authors demonstrate a reliable, automated method to identify the capacitive coupling between QDs. The approach combines machine learning with traditional fitting, to take advantage of the desirable properties of each. Also, analysis of cross capacitance may be used for automatic identification of the spurious QDs that occasionally form during device tuning. These techniques can autonomously flag devices with spurious dots near the operating regime, which is crucial information for reliable tuning for qubit operations.
Xingyi Wang, Christian Zimmermann, Michael Titze, Vasileios Niaouris, Ethan R. Hansen, Samuel H. D’Ambrosia, Lasse Vines, Edward S. Bielejec, and Kai-Mei C. Fu
Phys. Rev. Applied 19, 054090 (2023) - Published 30 May, 2023
Point-defect spin qubits with an optical interface may become the building blocks of future quantum networks. In this study, ion implantation at low fluences is used to create neutral In donors in ZnO that demonstrate desirable qubit properties. Notably, the authors also observe the signature of the indium electron-nuclear hyperfine interaction, which could enable access to a long-lived nuclear-spin memory. This result is an important step toward scalable formation of donor qubits in ZnO with optical access to a nuclear-spin memory.
Scott T. Alsid, Jennifer M. Schloss, Matthew H. Steinecker, John F. Barry, Andrew C. Maccabe, Guoqing Wang (王国庆), Paola Cappellaro, and Danielle A. Braje
Phys. Rev. Applied 19, 054095 (2023) - Published 31 May, 2023
Magnetometry with diamond nitrogen-vacancy (NV) ensembles has enabled devices with picotesla sensitivity at static and low-frequency fields, but their performance at higher frequencies lags far behind. The authors solve the technical challenges and demonstrate a microwave-frequency NV magnetometer with picotesla sensitivity, by implementing a pulse scheme for noise cancellation and employing a custom-grown diamond. This sensitivity enhancement could be extended into a far broader range of frequencies using spin-locking and quantum frequency mixing. These results could lead to applications such as near-field antenna characterization and microwave circuitry imaging.
Eyal Buks
Phys. Rev. Applied 19, L051001 (2023) - Published 8 May, 2023
Multimode lasing has a variety of applications in the fields of sensing, spectroscopy, signal processing, and communication. However, controllability of this phenomenon is commonly quite limited. This Letter demonstrates spectrum tunability of multimode lasing in a cooled optical-fiber ring. An intriguing connection between the observed optical spectrum and the sequence of prime numbers is found. This tunability of multimode lasing can be exploited for sensing, communication, and quantum data storage.
Maxime Giteau, Mitradeep Sarkar, Maria Paula Ayala, Michael T. Enders, and Georgia T. Papadakis
Phys. Rev. Applied 19, L051002 (2023) - Published 25 May, 2023
The ability to control thermal emission is critical for the development of infrared sources and on-demand energy production, but good emitters usually entail complex architectures. This study presents an analytical framework to design tunable narrowband emitters based on a simple, lithography-free Salisbury screen configuration that includes a phase-change material. Simulated devices show near-unity on-off switching and arbitrarily large spectral shifting between two emission wavelengths, which opens opportunities for tunable infrared sources, and more generally for midinfrared photonics.
Bin Jia, Lujun Huang, Artem S. Pilipchuk, Sibo Huang, Chen Shen, Almas F. Sadreev, Yong Li, and Andrey E. Miroshnichenko
Phys. Rev. Applied 19, 054001 (2023) - Published 1 May, 2023
Yoshitaka Taguchi, Yunzhuo Wang, Ryota Tanomura, Takuo Tanemura, and Yasuyuki Ozeki
Phys. Rev. Applied 19, 054002 (2023) - Published 1 May, 2023
Xinsheng Fang, Nengyin Wang, Wenwei Wu, Weibo Wang, Xuewen Yin, Xu Wang, and Yong Li
Phys. Rev. Applied 19, 054003 (2023) - Published 1 May, 2023
Yanqi Zhang, Adam Hines, Dalziel J. Wilson, and Felipe Guzman
Phys. Rev. Applied 19, 054004 (2023) - Published 2 May, 2023
Angel Valle
Phys. Rev. Applied 19, 054005 (2023) - Published 2 May, 2023
Francesco Marangon, David Baumgartner, and Carole Planchette
Phys. Rev. Applied 19, 054006 (2023) - Published 2 May, 2023
Andrei Stankevych, Rishabh Saxena, Alexander Vakhnin, Falk May, Naomi Kinaret, Denis Andrienko, Jan Genoe, Heinz Bässler, Anna Köhler, and Andrey Kadashchuk
Phys. Rev. Applied 19, 054007 (2023) - Published 2 May, 2023
Injected or photogenerated charge carriers in disordered organic semiconductors relax in energy to form an occupied density of states (ODOS) that is inherently difficult to probe. Thus little is known about nonequilibrium ODOS properties, although they are important in e.g. solar cells and LEDs. This work presents an optical technique for monitoring the ODOS distribution of relaxed charge carriers at low temperatures. The distribution that forms under nonequilibrium conditions is always narrower than that of the full DOS, in a universal ratio of about 2/3 that is reproduced by kinetic Monte Carlo simulations assuming spatially correlated disorder.
Hyeonu Heo, Arkadii Krokhin, Arup Neogi, Zhiming Cui, Zhihao Yuan, Yihe Hua, Jaehyung Ju, and Ezekiel Walker
Phys. Rev. Applied 19, 054008 (2023) - Published 2 May, 2023
S. Marinković, E. A. Abbey, D. A. D. Chaves, S. Collienne, E. Fourneau, L. Jiang, C. Xue, Y. H. Zhou, W. A. Ortiz, M. Motta, N. D. Nguyen, A. Volodin, J. Van de Vondel, and A. V. Silhanek
Phys. Rev. Applied 19, 054009 (2023) - Published 3 May, 2023
Andrea Meo, K. Pituso, P. Kampun, K. Pornpitakpong, A. Suntives, S.E. Rannala, R.W. Chantrell, P. Chureemart, and J. Chureemart
Phys. Rev. Applied 19, 054010 (2023) - Published 3 May, 2023
M.D. Kelisani, S. Barzegar, P. Craievich, and S. Doebert
Phys. Rev. Applied 19, 054011 (2023) - Published 3 May, 2023
I. Novikau, I.Y. Dodin, and E.A. Startsev
Phys. Rev. Applied 19, 054012 (2023) - Published 3 May, 2023
Juncai Chen, Yongliang Guo, Chunlan Ma, Shijing Gong, Chuanxi Zhao, Tianxing Wang, Xiao Dong, Zhaoyong Jiao, Shuhong Ma, Guoliang Xu, and Yipeng An
Phys. Rev. Applied 19, 054013 (2023) - Published 3 May, 2023
Long-Kun Du, Shuai Sun, Liang Jiang, Chen Chang, Hui-Zu Lin, and Wei-Tao Liu
Phys. Rev. Applied 19, 054014 (2023) - Published 4 May, 2023
Y. A. Yang, T. A. Zheng, S.-Z. Wang, W.-K. Hu, Chang-Ling Zou, T. Xia, and Z.-T. Lu
Phys. Rev. Applied 19, 054015 (2023) - Published 4 May, 2023
Xi Tang, Yan Kuai, Zetao Fan, Fengya Lu, Haofeng Zang, Junxue Chen, Qiwen Zhan, and Douguo Zhang
Phys. Rev. Applied 19, 054016 (2023) - Published 4 May, 2023
Xinyu Mu, Yiwen Ji, Hang Yin, and Kun Gao
Phys. Rev. Applied 19, 054017 (2023) - Published 4 May, 2023
Benjamin P. Dix-Matthews, David R. Gozzard, Skevos F.E. Karpathakis, Shane M. Walsh, Ayden McCann, Alex Frost, and Sascha W. Schediwy
Phys. Rev. Applied 19, 054018 (2023) - Published 4 May, 2023
Nathan R. Gemmell, Jefferson Flórez, Emma Pearce, Olaf Czerwinski, Chris C. Phillips, Rupert F. Oulton, and Alex S. Clark
Phys. Rev. Applied 19, 054019 (2023) - Published 5 May, 2023
Sensing with undetected photons is a fascinating technique that allows imaging at wavelengths outside a particular detector’s range—enabling, for example, biological imaging without perturbing live cells. In this interference technique, performance can be very sensitive to both sample transmission and losses. This study shows that by balancing the nonlinear interferometer’s arms, one can completely recover fringe visibility caused by signal loss. Moreover, intentional unbalancing offers a reduced-interaction regime where the detected power can be 200 times higher than the power reaching the sample, for ultrasensitive midinfrared sensing well below the conventional noise floor.
Si-Si Gu, Yong-Qiang Xu, Rui Wu, Shun-Li Jiang, Shu-Kun Ye, Ting Lin, Bao-Chuan Wang, Hai-Ou Li, Gang Cao, and Guo-Ping Guo
Phys. Rev. Applied 19, 054020 (2023) - Published 5 May, 2023
Giorgio De Simoni and Francesco Giazotto
Phys. Rev. Applied 19, 054021 (2023) - Published 5 May, 2023
Hengjun Liu, Fangchao Gu, Xiancheng Sang, Yuanyuan Han, Feihu Zou, Zhaohui Li, Yufeng Qin, Li Cai, Yuanyuan Pan, Qiang Cao, Guo-xing Miao, and Qiang Li
Phys. Rev. Applied 19, 054022 (2023) - Published 5 May, 2023
Rui Yang, Samuel Bosch, Bobak Kiani, Seth Lloyd, and Adrian Lupascu
Phys. Rev. Applied 19, 054023 (2023) - Published 5 May, 2023
A. Riss, M. Stöger, M. Parzer, F. Garmroudi, N. Reumann, B. Hinterleitner, T. Mori, and E. Bauer
Phys. Rev. Applied 19, 054024 (2023) - Published 8 May, 2023
Piyush Kumar, Maria Inês Mendes Martins, Marianne Etzelmüller Bathen, Judith Woerle, Thomas Prokscha, and Ulrike Grossner
Phys. Rev. Applied 19, 054025 (2023) - Published 8 May, 2023
M. Hinderling, D. Sabonis, S. Paredes, D.Z. Haxell, M. Coraiola, S.C. ten Kate, E. Cheah, F. Krizek, R. Schott, W. Wegscheider, and F. Nichele
Phys. Rev. Applied 19, 054026 (2023) - Published 8 May, 2023
Measurement and coherent manipulation of Andreev bound states (ABSs) in planar superconductor-semiconductor heterostructures could enable gate-controllable, small-footprint superconducting spin qubits with long coherence times. So far, readout capabilities and device coherence have been limited by lossy substrates, but here researchers overcome this limitation with a flip-chip approach to microwave experiments on ABSs. Superconductor-semiconductor devices and microwave resonators are placed on different chips and inductively coupled via a vacuum gap, enabling high-quality readout without sacrificing device properties.
Abhishek Mall and Kartik Ayyer
Phys. Rev. Applied 19, 054027 (2023) - Published 8 May, 2023
Han Liu, Xueqin Huang, Mou Yan, Jiuyang Lu, Weiyin Deng, and Zhengyou Liu
Phys. Rev. Applied 19, 054028 (2023) - Published 9 May, 2023
Long-range couplings beyond the nearest neighbors can trigger exotic topological phases in metamaterials but have been overlooked in many topological models. The authors study the effect of the long-range couplings on the topological properties, and demonstrate that a Su-Schrieffer-Heeger model including the third nearest coupling, implemented by acoustic metamaterials, can lead to topological phases of large winding numbers. The experimental results show additional topological end states and rotonlike dispersions for sound waves, highlighting the potential of these long-range metamaterials in creating rich topological features.
Kevin C. Chen, Prajit Dhara, Mikkel Heuck, Yuan Lee, Wenhan Dai, Saikat Guha, and Dirk Englund
Phys. Rev. Applied 19, 054029 (2023) - Published 9 May, 2023
Jason L. Pereira, Leonardo Banchi, and Stefano Pirandola
Phys. Rev. Applied 19, 054030 (2023) - Published 9 May, 2023
Jason L. Pereira, Leonardo Banchi, and Stefano Pirandola
Phys. Rev. Applied 19, 054031 (2023) - Published 9 May, 2023
Shuai Wang, Wenjun Zhang, Tao Zhang, Shuyao Mei, Yuqing Wang, Jiazhong Hu, and Wenlan Chen
Phys. Rev. Applied 19, 054032 (2023) - Published 9 May, 2023
Salvador Poveda-Hospital, Yves-Alain Peter, and Nicolás Quesada
Phys. Rev. Applied 19, 054033 (2023) - Published 10 May, 2023
K.D. Osborn and W. Wustmann
Phys. Rev. Applied 19, 054034 (2023) - Published 10 May, 2023
Reversible computing exploits thermodynamic principles to replace irreversible Boolean logic with higher-efficiency reversible logic, and could change the future of computers. How best to implement reversible gates and architectures remains an open problem. Superconducting hardware features negligible intrinsic damping, which allows for exploration of many digital circuit types with varying degrees of reversibility. This study simulates Josephson junctions, where single flux quanta serve as bits in this logic type, with the goal of replacing an irreversible shift-register memory. The authors find that asynchronous access, and therefore simpler architecture, is possible.
Kun Tang, Yuqi Wang, Shaobo Wang, Da Gao, Haojie Li, Xindong Liang, Patrick Sebbah, Yibin Li, Jin Zhang, and Junhui Shi
Phys. Rev. Applied 19, 054035 (2023) - Published 10 May, 2023
Hamed Pezeshki, Pingzhi Li, Reinoud Lavrijsen, Martijn Heck, Erwin Bente, Jos van der Tol, and Bert Koopmans
Phys. Rev. Applied 19, 054036 (2023) - Published 10 May, 2023
This paper provides a key solution for integrating spintronic memories with photonic integrated circuits, for all-optical switching and reading of nanoscale magnetic bits. Problems associated with nonlinear absorption and the intrinsically weak magneto-optical effect are solved by a hybrid scheme, exploiting plasmonic and photonic resonators. Thus the authors have developed a device concept that paves the way toward ultrafast, energy-efficient advanced on-chip applications.
Ping Wang, Wen Yang, and Renbao Liu
Phys. Rev. Applied 19, 054037 (2023) - Published 10 May, 2023
Ze Ma, Yang Liu, Yu-Xin Xie, and Yue-Sheng Wang
Phys. Rev. Applied 19, 054038 (2023) - Published 11 May, 2023
Assylan Akhanuly, Iliyas T. Dossyaev, Erik O. Shalenov, Constantinos Valagiannopoulos, Karlygash N. Dzhumagulova, Annie Ng, and Askhat N. Jumabekov
Phys. Rev. Applied 19, 054039 (2023) - Published 11 May, 2023
K.K. George Kurian, Sushree S. Sahoo, P.K. Madhu, and G. Rajalakshmi
Phys. Rev. Applied 19, 054040 (2023) - Published 11 May, 2023
Tamir Zchut and Yarden Mazor
Phys. Rev. Applied 19, 054041 (2023) - Published 11 May, 2023
Adam Doherty, Savvas Savvidis, Carlos Navarrete-León, Mattia F.M. Gerli, Alessandro Olivo, and Marco Endrizzi
Phys. Rev. Applied 19, 054042 (2023) - Published 11 May, 2023
Günter Steinmeyer, Jens W. Tomm, Pia Fuertjes, Uwe Griebner, Stanislav S. Balabanov, and Thomas Elsaesser
Phys. Rev. Applied 19, 054043 (2023) - Published 12 May, 2023
Amir Bahrami, Zoé-Lise Deck-Léger, and Christophe Caloz
Phys. Rev. Applied 19, 054044 (2023) - Published 12 May, 2023
Baoxing Zhai, Ruiqing Cheng, Tianxing Wang, Li Liu, Lei Yin, Yao Wen, Hao Wang, Sheng Chang, and Jun He
Phys. Rev. Applied 19, 054045 (2023) - Published 12 May, 2023
Feng Ning, Jing Huang, and Jun Kang
Phys. Rev. Applied 19, 054046 (2023) - Published 12 May, 2023
Martí Gutierrez Latorre, Gerard Higgins, Achintya Paradkar, Thilo Bauch, and Witlef Wieczorek
Phys. Rev. Applied 19, 054047 (2023) - Published 12 May, 2023
The authors present a platform for quantum experiments on levitated particles with masses ranging from nanograms to micrograms. They exploit the Meissner effect to magnetically levitate superconducting microparticles on a chip, in vacuum at ultralow temperatures. Integrated magnetic readout enables coupling to superconducting quantum circuits. This platform allows for precise measurements of force and acceleration, with potential applications in sensing, including the search for dark matter.
Qiang Zeng, Haoyang Wang, Huihong Yuan, Yuanbin Fan, Lai Zhou, Yuanfei Gao, Haiqiang Ma, and Zhiliang Yuan
Phys. Rev. Applied 19, 054048 (2023) - Published 15 May, 2023
Khalil As'ham, Ibrahim Al-Ani, Mohammed Alaloul, Salah Abdo, Amer Abdulghani, Wen Lei, Haroldo T. Hattori, Lujun Huang, and Andrey E. Miroshnichenko
Phys. Rev. Applied 19, 054049 (2023) - Published 15 May, 2023
Peng Zhao, Ruixia Wang, Meng-Jun Hu, Teng Ma, Peng Xu, Yirong Jin, and Haifeng Yu
Phys. Rev. Applied 19, 054050 (2023) - Published 15 May, 2023
Lina Chen, Kaiyuan Zhou, Zui Tao, Zhenyu Gao, Like Liang, Zishuang Li, and Ronghua Liu
Phys. Rev. Applied 19, 054051 (2023) - Published 15 May, 2023
Peng Ye, Wei Chen, Guo-Wei Zhang, Feng-Yu Lu, Fang-Xiang Wang, Guan-Zhong Huang, Shuang Wang, De-Yong He, Zhen-Qiang Yin, Guang-Can Guo, and Zheng-Fu Han
Phys. Rev. Applied 19, 054052 (2023) - Published 16 May, 2023
Lithium niobate (LN) devices have been widely adopted in systems for quantum key distribution (QKD), but the photorefractive effect in LN devices can be exploited as a potential loophole for malicious attacks by eavesdroppers. This work points out a vulnerability of LN devices of which manufacturers and users must become aware, so that appropriate countermeasures may be implemented. Moreover, the physical mechanism and techniques introduced in this work open an important avenue to the security analysis of QKD systems.
Taesu Ryu, Hwi-Min Kim, Sang-Woo Ki, Yong-Hee Lee, and Jin-Kyu Yang
Phys. Rev. Applied 19, 054053 (2023) - Published 16 May, 2023
Baoying Dou, Stefano Falletta, Jörg Neugebauer, Christoph Freysoldt, Xie Zhang, and Su-Huai Wei
Phys. Rev. Applied 19, 054054 (2023) - Published 16 May, 2023
Understanding nonradiative recombination is important for improving semiconductor devices. For Cu(In,Ga)Se (CIGS) solar cells, antisite defects have long been considered the main recombination centers, yet the underlying mechanism has remained elusive. Here first-principles calculations show that these “killer centers” themselves cannot capture holes efficiently for effective recombination. However, internal conversion to the distorted neutral DX center does open an efficient hole-capture pathway, and DX’s stability in CIGS increases with Ga concentration, which resolves the longstanding issue of why the efficiency of CIGS solar cells decreases at high Ga concentration.
Qiankun Li, Shun Wang, Jinshuo Xue, Ziwen Zhou, Yiqi Hu, Zhou Zhou, Zhijian Feng, Qingyu Yan, Yiqing Yu, Yuyan Weng, Rujun Tang, Xiaodong Su, Fengang Zheng, Liang Fang, and Lu You
Phys. Rev. Applied 19, 054055 (2023) - Published 16 May, 2023
Ionic migration in solid phases is actively explored as a mechanism for neuromorphic computing elements, for example, but direct imaging of the ionic migration and its correlation with macroscopic electronic transport are tricky. Through multiple state-of-the-art microscopy techniques the authors visualize Ag migration in AgBiPSe, and how it modulates the interfacial barrier to induce switchable diodelike transport in a device. Illuminating the device can be used to switch off its ionic tunability, expanding its functionality. These results provide direct insight into the mechanism of ion-mediated transport in ionically active semiconductors.
Maaike Rump, Uddalok Sen, Roger Jeurissen, Hans Reinten, Michel Versluis, Detlef Lohse, Christian Diddens, and Tim Segers
Phys. Rev. Applied 19, 054056 (2023) - Published 17 May, 2023
“Ugh, not again! Something’s wrong with this printer…” In inkjet printing the nozzles in the printhead have intermittent idle periods, during which the ink can evaporate from the nozzle exit. Inks are usually multicomponent, and each component has its own characteristic evaporation rate, resulting in concentration gradients within the ink that can alter the jetting process. Through experiments, analytical modeling, and numerical simulations, the authors unravel the complex physicochemical hydrodynamics associated with the drying of ink at a printhead nozzle.
Shuhan Chen, Qing Wang, Qi Wang, Jia Zhou, and Antoine Riaud
Phys. Rev. Applied 19, 054057 (2023) - Published 17 May, 2023
Kai Dai (戴凯), Anyang Cui (崔安阳), Zhen Liu (刘振), Li Chen (陈立), Yuting Yan (严雨婷), Lichen Gao (高立宸), Kai Jiang (姜凯), Jinzhong Zhang (张金中), Yawei Li (李亚巍), Genshui Wang (王根水), Xianlin Dong (董显林), and Zhigao Hu (胡志高)
Phys. Rev. Applied 19, 054058 (2023) - Published 17 May, 2023
Rhona Hamilton, Benjamin M. Roberts, Sarah K. Scholten, Clayton Locke, Andre N. Luiten, Jacinda S.M. Ginges, and Christopher Perrella
Phys. Rev. Applied 19, 054059 (2023) - Published 18 May, 2023
Fang-Xiang Wang, Qi-Hang Lu, Wei Chen, Shuang Wang, Haiyang Fu, Yinjie Lu, Penglei Hao, Jia-Lin Chen, Wenjing Ding, Jianyu Ma, De-Yong He, Zhen-Qiang Yin, Zheng Zhou, Guang-Can Guo, and Zheng-Fu Han
Phys. Rev. Applied 19, 054060 (2023) - Published 18 May, 2023
Hyeongu Lee, Yoon-Suk Kim, and Mincheol Shin
Phys. Rev. Applied 19, 054061 (2023) - Published 18 May, 2023
Juhyeok Lee, Moosung Lee, YongKeun Park, Colin Ophus, and Yongsoo Yang
Phys. Rev. Applied 19, 054062 (2023) - Published 18 May, 2023
Jia-Wei Ji, Faezeh Kimiaee Asadi, Khabat Heshami, and Christoph Simon
Phys. Rev. Applied 19, 054063 (2023) - Published 19 May, 2023
Yajie Han, Zhijie Liu, Zhiyu Liu, Hongying Chen, Pengxiang Hou, Jiayi Li, Yuqi Wang, Yu Deng, Yurong Yang, and Di Wu
Phys. Rev. Applied 19, 054064 (2023) - Published 19 May, 2023
Song Luo, Zhao Xu, Long Zhang, Zhengyong Song, and Zhanghai Chen
Phys. Rev. Applied 19, 054065 (2023) - Published 19 May, 2023
Bo Peng, Chao Feng, Zhen Wang, Jianfei Hua, Yipeng Wu, Haixiao Deng, Fei Li, Wei Lu, and Zhentang Zhao
Phys. Rev. Applied 19, 054066 (2023) - Published 19 May, 2023
Xi Zhao, Jing Chen, Yuting Wu, Fuxian Wei, Huiyao Wang, Xiaoli Chen, and Zuhong Xiong
Phys. Rev. Applied 19, 054067 (2023) - Published 22 May, 2023
Gurudayal Behera, Jiban Kangsabanik, Brahmananda Chakraborty, K.R. Balasubramaniam, and Aftab Alam
Phys. Rev. Applied 19, 054068 (2023) - Published 22 May, 2023
Alan Gardin, Jeremy Bourhill, Vincent Vlaminck, Christian Person, Christophe Fumeaux, Vincent Castel, and Giuseppe C. Tettamanzi
Phys. Rev. Applied 19, 054069 (2023) - Published 22 May, 2023
Yuan-Mei Xie, Jun-Lin Bai, Yu-Shuo Lu, Chen-Xun Weng, Hua-Lei Yin, and Zeng-Bing Chen
Phys. Rev. Applied 19, 054070 (2023) - Published 22 May, 2023
Daiki Hatanaka, Motoki Asano, Hajime Okamoto, and Hiroshi Yamaguchi
Phys. Rev. Applied 19, 054071 (2023) - Published 22 May, 2023
Hajime Shibata, Jiro Nishinaga, Yukiko Kamikawa, Hitoshi Tampo, Takehiko Nagai, Takashi Koida, Shogo Ishizuka, Toshimitsu Mochizuki, and Masafumi Yamaguchi
Phys. Rev. Applied 19, 054072 (2023) - Published 23 May, 2023
A.J. Jinia, T.E. Maurer, C.A. Meert, O.V. Pakari, S.D. Clarke, H.S. Kim, D.D. Wentzloff, and S.A. Pozzi
Phys. Rev. Applied 19, 054073 (2023) - Published 23 May, 2023
Tomás Manzaneque, Murali K. Ghatkesar, Farbod Alijani, Minxing Xu, Richard A. Norte, and Peter G. Steeneken
Phys. Rev. Applied 19, 054074 (2023) - Published 23 May, 2023
Siddarth Shivkumar, Dekel Ranann, Samuel Metais, Sisira Suresh, Nicolas Forget, Randy Bartels, Dan Oron, and Hervé Rigneault
Phys. Rev. Applied 19, 054075 (2023) - Published 23 May, 2023
Gabriel J. Abrahams, Ethan Ellul, Islay O. Robertson, Asma Khalid, Andrew D. Greentree, Brant C. Gibson, and Jean-Philippe Tetienne
Phys. Rev. Applied 19, 054076 (2023) - Published 23 May, 2023
Joshua Ziegler, Florian Luthi, Mick Ramsey, Felix Borjans, Guoji Zheng, and Justyna P. Zwolak
Phys. Rev. Applied 19, 054077 (2023) - Published 24 May, 2023
Single electrons trapped on semiconductor-defined quantum dots (QDs) are a promising platform for large-scale quantum computing. The authors demonstrate a reliable, automated method to identify the capacitive coupling between QDs. The approach combines machine learning with traditional fitting, to take advantage of the desirable properties of each. Also, analysis of cross capacitance may be used for automatic identification of the spurious QDs that occasionally form during device tuning. These techniques can autonomously flag devices with spurious dots near the operating regime, which is crucial information for reliable tuning for qubit operations.
Alexandre Silva, Veniero Lenzi, Sergey Pyrlin, Sandra Carvalho, Albano Cavaleiro, and Luís Marques
Phys. Rev. Applied 19, 054078 (2023) - Published 24 May, 2023
Wuhong Zhang, Diefei Xu, and Lixiang Chen
Phys. Rev. Applied 19, 054079 (2023) - Published 24 May, 2023
M.A.T. Butt, P. Roth, G.K.L. Wong, M.H. Frosz, L.L. Sánchez-Soto, E.A. Anashkina, A.V. Andrianov, P. Banzer, P.St.J. Russell, and G. Leuchs
Phys. Rev. Applied 19, 054080 (2023) - Published 24 May, 2023
Xiaodong Sun, Xinyu Zhao, Jingguang Chen, Fang Guan, and Xinhua Hu
Phys. Rev. Applied 19, 054081 (2023) - Published 24 May, 2023
Christopher Spiess, Sebastian Töpfer, Sakshi Sharma, Andrej Kržič, Meritxell Cabrejo-Ponce, Uday Chandrashekara, Nico Lennart Döll, Daniel Rieländer, and Fabian Steinlechner
Phys. Rev. Applied 19, 054082 (2023) - Published 25 May, 2023
Anna N. Morozovska, Eugene A. Eliseev, Mykola E. Yelisieiev, Yulian M. Vysochanskii, and Dean R. Evans
Phys. Rev. Applied 19, 054083 (2023) - Published 25 May, 2023
Xiangyu Wang, Menghao Xu, Yin Zhao, Ziyang Chen, Song Yu, and Hong Guo
Phys. Rev. Applied 19, 054084 (2023) - Published 25 May, 2023
Yifan Liang, Sergey Antipov, Qili Tian, Lixin Yan, Yingchao Du, Cheng Cheng, Renkai Li, Wenhui Huang, and Chuanxiang Tang
Phys. Rev. Applied 19, 054085 (2023) - Published 26 May, 2023
Jiayue Liu, Fei Fan, Zhiyu Tan, Huijun Zhao, Jierong Cheng, and Shengjiang Chang
Phys. Rev. Applied 19, 054086 (2023) - Published 26 May, 2023
P.B. Fischer and G. Catelani
Phys. Rev. Applied 19, 054087 (2023) - Published 26 May, 2023
Mingxin Li, Ning Zhang, Lixia Xu, Jixing Zhang, Guodong Bian, Pengcheng Fan, Sixian Wang, and Heng Yuan
Phys. Rev. Applied 19, 054088 (2023) - Published 26 May, 2023
A.A. Grachev, S.E. Sheshukova, M.P. Kostylev, S.A. Nikitov, and A.V. Sadovnikov
Phys. Rev. Applied 19, 054089 (2023) - Published 30 May, 2023
Xingyi Wang, Christian Zimmermann, Michael Titze, Vasileios Niaouris, Ethan R. Hansen, Samuel H. D’Ambrosia, Lasse Vines, Edward S. Bielejec, and Kai-Mei C. Fu
Phys. Rev. Applied 19, 054090 (2023) - Published 30 May, 2023
Point-defect spin qubits with an optical interface may become the building blocks of future quantum networks. In this study, ion implantation at low fluences is used to create neutral In donors in ZnO that demonstrate desirable qubit properties. Notably, the authors also observe the signature of the indium electron-nuclear hyperfine interaction, which could enable access to a long-lived nuclear-spin memory. This result is an important step toward scalable formation of donor qubits in ZnO with optical access to a nuclear-spin memory.
Cheng Wang, Louise Banniard, Laure Mercier de Lépinay, and Mika A. Sillanpää
Phys. Rev. Applied 19, 054091 (2023) - Published 30 May, 2023
Congzhen Chen, Yuanyuan Chen, and Lixiang Chen
Phys. Rev. Applied 19, 054092 (2023) - Published 30 May, 2023
Changyong Lei and Jie Ren
Phys. Rev. Applied 19, 054093 (2023) - Published 31 May, 2023
Peng Lv, Wenjing Lv, Donghai Wu, Gang Tang, Xunwang Yan, Zhansheng Lu, and Dongwei Ma
Phys. Rev. Applied 19, 054094 (2023) - Published 31 May, 2023
Scott T. Alsid, Jennifer M. Schloss, Matthew H. Steinecker, John F. Barry, Andrew C. Maccabe, Guoqing Wang (王国庆), Paola Cappellaro, and Danielle A. Braje
Phys. Rev. Applied 19, 054095 (2023) - Published 31 May, 2023
Magnetometry with diamond nitrogen-vacancy (NV) ensembles has enabled devices with picotesla sensitivity at static and low-frequency fields, but their performance at higher frequencies lags far behind. The authors solve the technical challenges and demonstrate a microwave-frequency NV magnetometer with picotesla sensitivity, by implementing a pulse scheme for noise cancellation and employing a custom-grown diamond. This sensitivity enhancement could be extended into a far broader range of frequencies using spin-locking and quantum frequency mixing. These results could lead to applications such as near-field antenna characterization and microwave circuitry imaging.
Fubao Yang, Peng Jin, Min Lei, Gaole Dai, Jun Wang, and Jiping Huang
Phys. Rev. Applied 19, 054096 (2023) - Published 31 May, 2023