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Fast and sensitive readout of a semiconductor quantum dot using an in situ microwave resonator with enhanced gate lever arm

Tim J. Wilson and Hong-Wen Jiang

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Phys. Rev. Applied 26, 024040 – Published 14 August, 2026

DOI: https://doi.org/10.1103/rmgr-vjms

Abstract

We report an experimental study of a Si/SiGe double quantum dot (DQD) directly coupled to a niobium superconducting coplanar stripline microwave resonator. This hybrid architecture enables high-bandwidth dispersive readout suitable for real-time feedback and error-correction protocols. Fast and sensitive readout is achieved primarily by optimizing the DQD gate lever arm, guided by MaSQE quantum dot simulations, which enhances the dispersive signal without requiring high-impedance resonators. We demonstrate a signal-to-noise ratio of unity with an integration time of 34.54 ns, corresponding to a system bandwidth of 14.48 MHz and a charge sensitivity of 1.86×10−4 e/Hz. Analysis of the voltage power spectral density (PSD) of the in-phase (I) and quadrature (Q) baseband signals characterizes the system’s readout noise, with the PSD’s dependence on integration time providing insight into distinct physical regimes.

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Outline

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Phys. Rev. Applied 26, 024040– Published 14 August, 2026
  • Received 27 January 2026
  • Revised 26 May 2026
  • Accepted 17 July 2026
Article part of CHORUS
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