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Strain-Induced Spin-Resonance Shifts in Silicon Devices

J. J. Pla1, A. Bienfait2, G. Pica3,4, J. Mansir5, F. A. Mohiyaddin1,*, Z. Zeng6, Y. M. Niquet6, A. Morello1, T. Schenkel7 et al.

J. J. L. Morton5 and P. Bertet2

  • 1School of Electrical Engineering and Telecommunications, University of New South Wales, Anzac Parade, Sydney, New South Wales 2052, Australia
  • 2Quantronics Group, SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette, France
  • 3Center for Neuroscience and Cognitive Systems @UniTn, Istituto Italiano di Tecnologia, Corso Bettini 31, 38068 Rovereto, Italy
  • 4SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews KY16 9SS, United Kingdom
  • 5London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, United Kingdom
  • 6Université Grenoble Alpes, CEA, INAC-MEM, L_Sim, F-38000 Grenoble, France
  • 7Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

  • *Present Address: Quantum Computing Institute, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, USA.
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Phys. Rev. Applied 9, 044014 – Published 10 April, 2018

DOI: https://doi.org/10.1103/PhysRevApplied.9.044014

Abstract

In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.

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Phys. Rev. Applied 9, 044014– Published 10 April, 2018
  • Received 26 August 2016
  • Revised 27 December 2017
Article part of CHORUS
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