- Physical Review Journals
All JournalsPhysics Magazine
Access Provided by Xinjiang University

Physical Review Applied

Export citation

Export citation

Choose format for download:

Download Citation
  • Access by Xinjiang University

In Situ Monitoring of the Thermal-Annealing Effect in a Monolayer of MoS2

Liqin Su1, Yifei Yu2, Linyou Cao2, and Yong Zhang1,*

  • 1Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, North Carolina 28223, USA
  • 2Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

  • *yong.zhang@uncc.edu
PDF

Phys. Rev. Applied 7, 034009 – Published 10 March, 2017

DOI: https://doi.org/10.1103/PhysRevApplied.7.034009

Abstract

We perform in situ two-cycle thermal-annealing studies for a transferred CVD-grown monolayer MoS2 on a SiO2/Si substrate, using spatially resolved micro-Raman and photoluminescence spectroscopy. The evolution in film morphology and film-substrate bonding is continuously monitored by Raman spectroscopy. After the thermal cycling and being annealed at 305 °C twice, the film morphology and film-substrate bonding are significantly modified, which together with the removal of polymer residues causes major changes in the strain and doping distribution over the film, and thus the optical properties. Before annealing, the strain associated with ripples in the transferred film dominates the spatial distributions of the photoluminescence peak position and intensity over the film; after annealing, the variation in film-substrate bonding, affecting both strain and doping, becomes the leading factor. This work reveals that the film-substrate bonding, and thus the strain and doping, is nonstationary under thermal stress, which is important for understanding the substrate effects on the optical and transport properties of the 2D material and their impact on device applications.

View figure in article

Physics Subject Headings (PhySH)

Article Text

References (42)

  1. D. Sercombe, S. Schwarz, O. D. Pozo-Zamudio, F. Liu, B. J. Robinson, E. A. Chekhovich, I. I. Tartakovskii, O. Kolosov, and A. I. Tartakovskii, Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates, Sci. Rep. 3, 3489 (2013).
  2. L. Su, Y. Zhang, Y. Yu, and L. Cao, Dependence of coupling of quasi 2-D MoS2 with substrates on substrate types, probed by temperature dependent Raman scattering, Nanoscale 6, 4920 (2014).
  3. M. Buscema, G. A. Steele, H. S. J. van der Zant, and A. Castellanos-Gomez, The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2, Nano Res. 7, 561 (2014).
  4. L. Su, Y. Yu, L. Cao, and Y. Zhang, Effects of substrate type and material-substrate bonding on high-temperature behavior of monolayer WS2, Nano Res. 8, 2686 (2015).
  5. Y. Yu, Y. Yu, C. Xu, Y.-Q. Cai, L. Su, Y. Zhang, Y.-W. Zhang, K. Gundogdu, and L. Cao, Engineering substrate interactions for high luminescence efficiency of transition-metal dichalcogenide monolayers, Adv. Funct. Mater. 26, 4733 (2016).
  6. D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, Hysteresis in single-layer MoS2 field effect transistors, ACS Nano 6, 5635 (2012).
  7. K. Cho, W. Park, J. Park, H. Jeong, J. Jang, T.-Y. Kim, W.-K. Hong, S. Hong, and T. Lee, Electric stress-induced threshold voltage instability of multilayer MoS2 field effect transistors, ACS Nano 7, 7751 (2013).
  8. P. B. Shah, M. Amani, M. L. Chin, T. P. O’Regan, F. J. Crowne, and M. Dubey, Analysis of temperature dependent hysteresis in MoS2 field effect transistors for high frequency applications, Solid-State Electron. 91, 87 (2014).
  9. H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, B. Özyilmaz, and G. Eda, Transport properties of monolayer MoS2 grown by chemical vapor deposition, Nano Lett. 14, 1909 (2014).
  10. G. He, K. Ghosh, U. Singisetti, H. Ramamoorthy, R. Somphonsane, G. Bohra, M. Matsunaga, A. Higuchi, N. Aoki, S. Najmaei, Y. Gong, X. Zhang, R. Vajtai, P. M. Ajayan, and J. P. Bird, Conduction mechanisms in CVD-grown monolayer MoS2 transistors: From variable-range hopping to velocity saturation, Nano Lett. 15, 5052 (2015).
  11. H. Ramamoorthy, R. Somphonsane, J. Radice, G. He, C. P. Kwan, and J. P. Bird, “Freeing” Graphene from its substrate: Observing intrinsic velocity saturation with rapid electrical pulsing, Nano Lett. 16, 399 (2016).
  12. A. Castellanos-Gomez, R. Roldán, E. Cappelluti, M. Buscema, F. Guinea, H. S. J. van der Zant, and G. A. Steele, Local strain engineering in atomically thin MoS2, Nano Lett. 13, 5361 (2013).
  13. H. J. Conley, B. Wang, J. I. Ziegler, R. F. Haglund, S. T. Pantelides, and K. I. Bolotin, Bandgap engineering of strained monolayer and bilayer MoS2, Nano Lett. 13, 3626 (2013).
  14. K. F. Mak, K. He, C. Lee, G. H. Lee, J. Hone, T. F. Heinz, and J. Shan, Tightly bound trions in monolayer MoS2, Nat. Mater. 12, 207 (2013).
  15. C. Rice, R. J. Young, R. Zan, U. Bangert, D. Wolverson, T. Georgiou, R. Jalil, and K. S. Novoselov, Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS2, Phys. Rev. B 87, 081307 (2013).
  16. B. Chakraborty, A. Bera, D. V. S. Muthu, S. Bhowmick, U. V. Waghmare, and A. K. Sood, Symmetry-dependent phonon renormalization in monolayer MoS2 transistor, Phys. Rev. B 85, 161403 (2012).
  17. H. Li, A. W. Contryman, X. Qian, S. M. Ardakani, Y. Gong, X. Wang, J. M. Weisse, C. H. Lee, J. Zhao, P. M. Ajayan, J. Li, H. C. Manoharan, and X. Zheng, Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide, Nat. Commun. 6, 7381 (2015).
  18. J. Feng, X. Qian, C.-W. Huang, and J. Li, Strain-engineered artificial atom as a broad-spectrum solar energy funnel, Nat. Photonics 6, 866 (2012).
  19. W. Zhou, X. Zou, S. Najmaei, Z. Liu, Y. Shi, J. Kong, J. Lou, P. M. Ajayan, B. I. Yakobson, and J.-C. Idrobo, Intrinsic structural defects in monolayer molybdenum disulfide, Nano Lett. 13, 2615 (2013).
  20. K. Dolui, I. Rungger, and S. Sanvito, Origin of the n-type and p-type conductivity of MoS2 monolayers on a SiO2 substrate, Phys. Rev. B 87, 165402 (2013).
  21. N. Scheuschner, O. Ochedowski, A.-M. Kaulitz, R. Gillen, M. Schleberger, and J. Maultzsch, Photoluminescence of freestanding single- and few-layer MoS2, Phys. Rev. B 89, 125406 (2014).
  22. J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, Electrical control of neutral and charged excitons in a monolayer semiconductor, Nat. Commun. 4, 1474 (2013).
  23. H. Li, J. Wu, X. Huang, Z. Yin, J. Liu, and H. Zhang, A universal, rapid method for clean transfer of nanostructures onto various substrates, ACS Nano 8, 6563 (2014).
  24. Y.-C. Lin, C.-C. Lu, C.-H. Yeh, C. Jin, K. Suenaga, and P.-W. Chiu, Graphene annealing: How clean can it be?, Nano Lett. 12, 414 (2012).
  25. S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating, Nano Lett. 13, 2831 (2013).
  26. T. Livneh and E. Sterer, Resonant Raman scattering at exciton states tuned by pressure and temperature in 2H−MoS2, Phys. Rev. B 81, 195209 (2010).
  27. N. A. Lanzillo, A. Glen Birdwell, M. Amani, F. J. Crowne, P. B. Shah, S. Najmaei, Z. Liu, P. M. Ajayan, J. Lou, M. Dubey, S. K. Nayak, and T. P. O’Regan, Temperature-dependent phonon shifts in monolayer MoS, Appl. Phys. Lett. 103, 093102 (2013).
  28. S. Sahoo, A. P. S. Gaur, M. Ahmadi, M. J. F. Guinel, and R. S. Katiyar, Temperature-dependent Raman studies and thermal conductivity of few-layer MoS2, J. Phys. Chem. C 117, 9042 (2013).
  29. L. Su and Y. Zhang, Temperature coefficients of phonon frequencies and thermal conductivity in thin black phosphorus layers, Appl. Phys. Lett. 107, 071905 (2015).
  30. D. Yoon, Y.-W. Son, and H. Cheong, Negative thermal expansion coefficient of graphene measured by Raman spectroscopy, Nano Lett. 11, 3227 (2011).
  31. Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films, Sci. Rep. 3, 1866 (2013).
  32. A. Gurarslan, Y. Yu, L. Su, Y. Yu, F. Suarez, S. Yao, Y. Zhu, M. Ozturk, Y. Zhang, and L. Cao, Surface-energy-assisted perfect transfer of centimeter-scale monolayer and few-layer MoS2 films onto arbitrary substrates, ACS Nano 8, 11522 (2014).
  33. Y. Huang, E. Sutter, N. N. Shi, J. Zheng, T. Yang, D. Englund, H.-J. Gao, and P. Sutter, Reliable exfoliation of large-area high-quality flakes of graphene and other two-dimensional materials, ACS Nano 9, 10612 (2015).
  34. J. Wu, H. Li, Z. Yin, H. Li, J. Liu, X. Cao, Q. Zhang, and H. Zhang, Layer thinning and etching of mechanically exfoliated MoS2 nanosheets by thermal annealing in air, Small 9, 3314 (2013).
  35. H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, From bulk to monolayer MoS2: Evolution of Raman scattering, Adv. Funct. Mater. 22, 1385 (2012).
  36. H. Taghinejad, M. Taghinejad, A. Tarasov, M.-Y. Tsai, A. H. Hosseinnia, P. M. Campbell, A. A. Eftekhar, E. M. Vogel, and A. Adibi, Nonlinear Raman Shift Induced by Exciton-to-Trion Transformation in Suspended Trilayer MoS2, arXiv:1502.00593.
  37. A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, Emerging photoluminescence in monolayer MoS2, Nano Lett. 10, 1271 (2010).
  38. Y. Zhang, M. D. Sturge, K. Kash, B. P. van der Gaag, A. S. Gozdz, L. T. Florez, and J. P. Harbison, Temperature dependence of luminescence efficiency, exciton transfer, and exciton localization in GaAs/AlxGa1−xAs quantum wires and quantum dots, Phys. Rev. B 51, 13303 (1995).
  39. W. Shockley, On the surface states associated with a periodic potential, Phys. Rev. 56, 317 (1939).
  40. W. Shockley and G. L. Pearson, Modulation of conductance of thin films of semi-conductors by surface charges, Phys. Rev. 74, 232 (1948).
  41. H. Tada, A. E. Kumpel, R. E. Lathrop, J. B. Slanina, P. Nieva, P. Zavracky, I. N. Miaoulis, and P. Y. Wong, Thermal expansion coefficient of polycrystalline silicon and silicon dioxide thin films at high temperatures, J. Appl. Phys. 87, 4189 (2000).
  42. C. Sevik, Assessment on lattice thermal properties of two-dimensional honeycomb structures: Graphene, h−BN, h−MoS2, and h−MoSe2, Phys. Rev. B 89, 035422 (2014).

Outline

Information

Phys. Rev. Applied 7, 034009– Published 10 March, 2017
  • Received 12 October 2016
Article part of CHORUS

© 2017 American Physical Society

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation