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Contributions of a Higher Triplet Excited State to the Emission Properties of a Thermally Activated Delayed-Fluorescence Emitter

Takashi Kobayashi1,2,*, Akitsugu Niwa1, Kensho Takaki1, Shota Haseyama1, Takashi Nagase1,2, Kenichi Goushi3,4,5, Chihaya Adachi3,4,5, and Hiroyoshi Naito1,2,†

  • 1Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuencho, Naka, Sakai 599-8531, Japan
  • 2Research Institute of Molecular Electronic Devices (RIMED), Osaka Prefecture University, 1-1 Gakuencho, Naka, Sakai 599-8531, Japan
  • 3Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan
  • 4Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project, 744 Motooka, Nishi, Fukuoka 819-0395, Japan
  • 5International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan

  • *tkobaya@pe.osakafu-u.ac.jp
  • naito@pe.osakafu-u.ac.jp

Phys. Rev. Applied 7, 034002 – Published 6 March, 2017

DOI: https://doi.org/10.1103/PhysRevApplied.7.034002

Abstract

The temperature dependences of photoluminescence (PL) decay rates and the PL spectrum of a thermally activated delayed-fluorescence emitter, 1,2,3,5-tetrakis(carbazol-9-yl)-4,6-dicyanobenzene (4CzIPN), are investigated. It is found that not only the lowest singlet (S1) and triplet (T1) excited states but also an additional triplet excited state (Tn) lying between S1 and T1 play an important role in the exciton decay process, particularly around 100 K. At around this temperature, some of the triplet excitons are thermally activated into Tn but not up to S1, and they then decay into the ground state (S0) with phosphorescence emission. Therefore, two kinds of phosphorescence, originating from Tn and T1, are observed. The temperature dependence of the PL decay rates of 4CzIPN can be explained by a four-level model consisting of S1, T1, Tn, and S0, and its energy gaps between Tn and T1 and between S1 and T1 are determined to be 45±5meV and 135±10meV, respectively.

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