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Robust Two-Dimensional Electronic Properties in Three-Dimensional Microstructures of Rotationally Stacked Turbostratic Graphene

Nils Richter1,2, Yenny R. Hernandez1,3,4, Sebastian Schweitzer5, June-Seo Kim1,5,6, Ajit Kumar Patra5,7, Jan Englert8, Ingo Lieberwirth3, Andrea Liscio9,10, Vincenzo Palermo9 et al.

Xinliang Feng3,11, Andreas Hirsch8, Klaus Müllen3,12,*, and Mathias Kläui1,2,5,†

  • 1Institut für Physik, Johannes Gutenberg-Universität Mainz, Staudingerweg 7, 55128 Mainz, Germany
  • 2Graduate School Materials Science in Mainz, Staudingerweg 9, 55128 Mainz, Germany
  • 3Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany
  • 4Physics Department, Universidad de los Andes, Carrera 1 18A—10, Bogota, Colombia
  • 5Fachbereich Physik, Universität Konstanz, 78457 Konstanz, Germany
  • 6DGIST-LBNL Research Center for Emerging Materials, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
  • 7Department of Physics, Central University of Rajasthan NH-8, Bandarsindri, Rajasthan 305817, India
  • 8Friedrich Alexander Universität Erlangen—Nürnberg, Henkestrasse 42, 91054 Erlangen, Germany
  • 9ISOF—Istituto Sintesi Organica a Fotoreattivitá CNR, Area della Ricerca di Bologna, Via Gobetti 101, 40129 Bologna, Italy
  • 10ISC—Istituto dei Sistemi Complessi CNR, Area di Ricerca di Tor Vergata, Via del Fosso del Cavaliere 100, 00133 Roma, Italy
  • 11Center for Advancing Electronics Dresden (CFAED) and Department of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstrasse 4, 01062 Dresden, Germany
  • 12Institut für physikalische Chemie, Johannes Gutenberg-Universität Mainz, Duesbergweg 10-14, 55128 Mainz, Germany

  • *Corresponding author. muellen@mpip-mainz.mpg.de
  • †Corresponding author. klaeui@uni-mainz.de
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Phys. Rev. Applied 7, 024022 – Published 23 February, 2017

DOI: https://doi.org/10.1103/PhysRevApplied.7.024022

Abstract

We report on the electronic properties of turbostratic graphitic microdisks, rotationally stacked systems of graphene layers, where interlayer twisting leads to electronic decoupling resulting in charge-transport properties that retain the two dimensionality of graphene, despite the presence of a large number of layers. A key fingerprint of this reduced dimensionality is the effect of weak charge-carrier localization that we observe at low temperatures. The disks’ resistivity measured as a function of magnetic field changes its shape from parabolic at room temperature to linear at a temperature of 2.7 K indicating further this type of two-dimensional transport. Compared to Bernal stacked graphite, turbostratic graphene is mechanically much more robust, and it exhibits almost negligible variations of the electrical properties between samples. We demonstrate a reproducible resistivity of (3.52±0.11)×10−6  Ω m, which is a particularly low value for graphitic systems. Combined with large charge-carrier mobilities demonstrated at low temperatures of up to 7×104  cm2/V s, typical for carbon-based crystalline conductors, such disks are highly interesting from a scientific point of view and, in particular, for applications where robust electronic properties are required.

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Phys. Rev. Applied 7, 024022– Published 23 February, 2017
  • Received 28 July 2016

© 2017 American Physical Society

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