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Piezoelectric Response to Coherent Longitudinal and Transverse Acoustic Phonons in a Semiconductor Schottky Diode

D. Srikanthreddy1, B. A. Glavin2, C. L. Poyser1,*, M. Henini1, D. Lehmann3, Cz. Jasiukiewicz4, A. V. Akimov1, and A. J. Kent1

  • 1School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom
  • 2V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences, Kiev 03028, Ukraine
  • 3Institute for Theoretical Physics, TU Dresden, D-01062 Dresden, Germany
  • 4Faculty of Mathematics and Applied Physics, Rzeszów University of Technology, aleja Powstańców Warszawy 8, PL-35-959 Rzeszów, Poland

  • *Corresponding author. caroline.poyser@nottingham.ac.uk

Phys. Rev. Applied 7, 024014 – Published 13 February, 2017

DOI: https://doi.org/10.1103/PhysRevApplied.7.024014

Abstract

We study the generation of microwave electronic signals by pumping a (311) GaAs Schottky diode with compressive and shear acoustic phonons, generated by the femtosecond optical excitation of an Al film transducer and mode conversion at the Al-GaAs interface. They propagate through the substrate and arrive at the Schottky device on the opposite surface, where they induce a microwave electronic signal. The arrival time, the amplitude, and the polarity of the signals depend on the phonon mode. A theoretical analysis is made of the polarity of the experimental signals. This analysis includes the piezoelectric and deformation potential mechanisms of electron-phonon interaction in a Schottky contact and shows that the piezoelectric mechanism is dominant for both transverse and longitudinal modes with frequencies below 250 and 70 GHz, respectively.

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