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Large Voltage-Induced Changes in the Perpendicular Magnetic Anisotropy of an MgO-Based Tunnel Junction with an Ultrathin Fe Layer

Takayuki Nozaki1,*, Anna Kozioł-Rachwał1,2, Witold Skowroński1,3, Vadym Zayets1, Yoichi Shiota1, Shingo Tamaru1, Hitoshi Kubota1, Akio Fukushima1, Shinji Yuasa1 et al.

Yoshishige Suzuki1,4

  • 1National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
  • 2AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Al. Mickiewicza 30, 30-059 Kraków, Poland
  • 3AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków, Poland
  • 4Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan

  • *nozaki-t@aist.go.jp

Phys. Rev. Applied 5, 044006 – Published 15 April, 2016

DOI: https://doi.org/10.1103/PhysRevApplied.5.044006

Abstract

We study the voltage control of perpendicular magnetic anisotropy in an ultrathin Fe layer sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface magnetic anisotropy energy of 2.1mJ/m2 is achieved in the Cr/ultrathin Fe/MgO structure. A large voltage-induced perpendicular magnetic anisotropy change is observed under the negative-bias voltage applications for the case of the Fe layer thinner than 0.6 nm. The amplitude of the voltage-induced anisotropy energy change exhibits a strong Fe-thickness dependence and it reaches as high as 290fJ/Vm. The observed high values of the surface anisotropy and voltage-induced anisotropy energy change demonstrate the feasibility of voltage-driven spintronic devices.

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