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Current Filamentation in Large Bi2Sr2CaCu2O8+δ Mesa Devices Observed via Luminescent and Scanning Laser Thermal Microscopy

T. M. Benseman1,2, A. E. Koshelev1, V. Vlasko-Vlasov1, Y. Hao1,2, W.-K. Kwok1, U. Welp1,*, C. Keiser3, B. Gross4, M. Lange4 et al.

D. Kölle4, R. Kleiner4, H. Minami5, C. Watanabe5, and K. Kadowaki5

  • 1Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 2Department of Physics, University of Illinois at Chicago, 845 West Taylor Street, Chicago, Illinois 60607, USA
  • 3Northern Iowa University, Cedar Falls, Iowa 50614, USA
  • 4Physikalisches Institut and Center for Collective Quantum Phenomena in LISA+, Universität Tübingen, Auf der Morgenstelle 14, D-72076 Tübingen, Germany
  • 5Institute for Materials Science, University of Tsukuba, Ibaraki 305-8753, Japan

  • *welp@anl.gov

Phys. Rev. Applied 3, 044017 – Published 27 April, 2015

DOI: https://doi.org/10.1103/PhysRevApplied.3.044017

Abstract

We study the self-heating of a large stack of Bi2Sr2CaCu2O8+δ intrinsic Josephson junctions, of a configuration designed for terahertz generation. We find good qualitative agreement between direct thermoluminescent measurements of the device surface temperature and low-temperature scanning laser microscopy images. In particular, the two techniques both reveal a mode of thermal instability through the asymmetric nucleation of a small hot spot near a corner or edge of the sample. This behavior conforms with a theoretical stability analysis, and the radius of the hot spot is in excellent agreement with theoretical predictions, as is its growth with increasing bias current and bath temperature. Narrow hot spots may offer a possible means of enhancing the terahertz emission power from this type of device.

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