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Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature

Tomoyuki Sasaki1, Yuichiro Ando2,3, Makoto Kameno2, Takayuki Tahara3, Hayato Koike1, Tohru Oikawa1, Toshio Suzuki4, and Masashi Shiraishi2,3,*,†

  • 1Advanced Technology Development Center, TDK Corporation, Japan
  • 2Graduate School of Engineering Science, Osaka University, Japan
  • 3Department of Electronic Science and Engineering, Kyoto University, Japan
  • 4AIT, Akita Prefectural Industrial Center, Akita, Japan

  • *Corresponding author.
  • †mshiraishi@kuee.kyoto-u.ac.jp
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Phys. Rev. Applied 2, 034005 – Published 10 September, 2014Erratum Phys. Rev. Applied 9, 039901 (2018)

DOI: https://doi.org/10.1103/PhysRevApplied.2.034005

Abstract

Spin transport in nondegenerate semiconductors is expected to pave the way to the creation of spin transistors, spin logic devices, and reconfigurable logic circuits, because room-temperature (RT) spin transport in Si has already been achieved. However, RT spin transport has been limited to degenerate Si, which makes it difficult to produce spin-based signals because a gate electric field cannot be used to manipulate such signals. Here, we report the experimental demonstration of spin transport in nondegenerate Si with a spin metal-oxide-semiconductor field-effect transistor (MOSFET) structure. We successfully observe the modulation of the Hanle-type spin-precession signals, which is a characteristic spin dynamics in nondegenerate semiconductors. We obtain long spin transport of more than 20  μm and spin rotation greater than 4π at RT. We also observe gate-induced modulation of spin-transport signals at RT. The modulation of the spin diffusion length as a function of a gate voltage is successfully observed, which we attribute to the Elliott-Yafet spin relaxation mechanism. These achievements are expected to lead to the creation of practical Si-based spin MOSFETs.

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Erratum

Erratum: Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature [Phys. Rev. Appl. 2, 034005 (2014)]

Tomoyuki Sasaki, Yuichiro Ando, Makoto Kameno, Takayuki Tahara, Hayato Koike, Tohru Oikawa, Toshio Suzuki, and Masashi Shiraishi
Phys. Rev. Applied 9, 039901 (2018)

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Phys. Rev. Applied 2, 034005– Published 10 September, 2014
  • Received 4 March 2014

© 2014 American Physical Society

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