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Highly Sensitive Superconducting Quantum-Interference Proximity Transistor
Phys. Rev. Applied 2, 024005 – Published 11 August, 2014
DOI: https://doi.org/10.1103/PhysRevApplied.2.024005
Abstract
We report the design and implementation of a high-performance superconducting quantum-interference proximity transistor based on aluminum-copper technology. With the adoption of a thin and short copper nanowire, we demonstrate full phase-driven modulation of the proximity-induced minigap in the normal-metal density of states. Under optimal bias, we record unprecedentedly high flux-to-voltage (up to ) and flux-to-current (exceeding ) transfer function values at subkelvin temperatures, where is the flux quantum. The best magnetic-flux resolution (as low as at 240 mK being limited by the room-temperature preamplification stage) is reached under fixed current bias. These figures of merit combined with ultralow power dissipation and micrometer-size dimensions make this mesoscopic interferometer attractive for low-temperature applications such as the investigation of the magnetization of small spin populations.
Article Text
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