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Precision Measurement of the Microwave Dielectric Loss of Sapphire in the Quantum Regime with Parts-per-Billion Sensitivity

Alexander P. Read1,2,*,†, Benjamin J. Chapman1,2,†,‡, Chan U Lei1,2, Jacob C. Curtis1,2, Suhas Ganjam1,2, Lev Krayzman1,2, Luigi Frunzio1,2, and Robert J. Schoelkopf1,2

  • 1Departments of Physics and Applied Physics, Yale University, New Haven, Connecticut 06511, USA
  • 2Yale Quantum Institute, Yale University, New Haven, Connecticut 06511, USA

  • *alex.read@yale.edu
  • †These authors contributed equally to this work.
  • ‡benjamin.chapman@yale.edu
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Phys. Rev. Applied 19, 034064 – Published 20 March, 2023

DOI: https://doi.org/10.1103/PhysRevApplied.19.034064

Abstract

Dielectric loss is known to limit state-of-the-art superconducting qubit lifetimes. Recent experiments imply upper bounds on bulk dielectric loss tangents on the order of 100 parts per billion but because these inferences are drawn from fully fabricated devices with many loss channels, these experiments do not definitely implicate or exonerate the dielectric. To resolve this ambiguity, we devise a measurement method capable of separating and resolving bulk dielectric loss with a sensitivity at the level of 5×10−9. The method, which we call the dielectric dipper, involves the in situ insertion of a dielectric sample into a high-quality microwave cavity mode. Smoothly varying the participation of the sample in the cavity mode enables a differential measurement of the dielectric loss tangent of the sample. The dielectric dipper can probe the low-power behavior of dielectrics at cryogenic temperatures and does so without the need for any lithographic process, enabling controlled comparisons of substrate materials and processing techniques. We demonstrate the method with measurements of sapphire grown by edge-defined film-fed growth (EFG) in comparison to high-grade sapphire grown by the heat-exchanger method (HEMEX). For EFG sapphire, we infer a bulk loss tangent of 63(8)×10−9 and a substrate-air interface loss tangent of 15(3)×10−4 (assuming a sample surface thickness of 3nm). For a typical transmon, this bulk loss tangent would limit device quality factors to Q⪅20×106, suggesting that bulk loss is likely the dominant loss mechanism in the longest-lived transmons on sapphire. We also demonstrate this method on HEMEX sapphire and bound its bulk loss tangent to be less than 19(6)×10−9. As this bound is about 3 times smaller than the bulk loss tangent of EFG sapphire, the use of HEMEX sapphire as a substrate would lift the bulk dielectric coherence limit of a typical transmon qubit to several milliseconds.

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Phys. Rev. Applied 19, 034064– Published 20 March, 2023
  • Received 12 July 2022
  • Accepted 22 December 2022
Article part of CHORUS
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