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Low-Field Microwave-Free Magnetometry Using the Dipolar Spin Relaxation of Quartet Spin States in Silicon Carbide

Oscar Bulancea-Lindvall1, Matthew T. Eiles2,*, Nguyen Tien Son1,†, Igor A. Abrikosov1, and Viktor Ivády1,2,3,‡

  • 1Department of Physics, Chemistry and Biology, Linköping University, Linköping SE-581 83, Sweden
  • 2Max-Planck-Institut für Physik komplexer Systeme, Nöthnitzer Str. 38, Dresden D-01187, Germany
  • 3Department of Physics of Complex Systems, Eötvös Loránd University, Egyetem tér 1-3, H-1053 Budapest, Hungary
  • 4MTA-ELTE Lendület “Momentum” NewQubit Research Group, Pázmány Péter, Sétány 1/A, 1117 Budapest, Hungary

  • *meiles@pks.mpg.de
  • †tien.son.nguyen@liu.se
  • ‡viktor.ivady@liu.se
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Phys. Rev. Applied 19, 034006 – Published 2 March, 2023

DOI: https://doi.org/10.1103/PhysRevApplied.19.034006

Abstract

Paramagnetic defects and nuclear spins are the major sources of magnetic-field-dependent spin relaxation in point-defect quantum bits. The detection of related optical signals has led to the development of advanced relaxometry applications with high spatial resolution. The nearly degenerate quartet ground state of the silicon-vacancy qubit in silicon carbide (SiC) is of special interest in this respect, as it gives rise to relaxation-rate extrema at vanishing magnetic field values and emits in the first near-infrared transmission window of biological tissues, providing an opportunity for the development of sensing applications for medicine and biology. However, the relaxation dynamics of the silicon-vacancy center in SiC have not yet been fully explored. In this paper, we present results from a comprehensive theoretical investigation of the dipolar spin relaxation of the quartet spin states in various local spin environments. We discuss the underlying physics and quantify the magnetic field and spin-bath-dependent relaxation time T1. Using these findings, we demonstrate that the silicon-vacancy qubit in SiC can implement microwave-free low-magnetic-field quantum sensors of great potential.

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Phys. Rev. Applied 19, 034006– Published 2 March, 2023
  • Received 2 February 2022
  • Revised 13 July 2022
  • Accepted 21 December 2022
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