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Thermoelectricity in Quantum Hall Corbino Structures

Mariano Real1,*, Daniel Gresta2, Christian Reichl3, Jürgen Weis4, Alejandra Tonina1, Paula Giudici5, Liliana Arrachea2, Werner Wegscheider3, and Werner Dietsche3,4

  • 1Instituto Nacional de Tecnología Industrial, INTI and INCALIN-UNSAM, Avenida General Paz 5445, Buenos Aires 1650, Argentina
  • 2International Center for Advanced Studies, ECyT-UNSAM, 25 de Mayo y Francia, Buenos Aires 1650, Argentina
  • 3Solid State Physics Laboratory, ETH Zürich, Zürich CH-8093, Switzerland
  • 4Max-Plack-Institut für Festkörperforschung, Heisenbergstrasse 1, Stuttgart D-70569 Germany
  • 5INN CNEA-CONICET, Avenida General Paz 1499, Buenos Aires 1650, Argentina

  • *mreal@inti.gob.ar

Phys. Rev. Applied 14, 034019 – Published 8 September, 2020

DOI: https://doi.org/10.1103/PhysRevApplied.14.034019

Abstract

We measure the thermoelectric response of Corbino structures in the quantum Hall effect regime and compare it with a theoretical analysis. The measured thermoelectric voltages are qualitatively and quantitatively simulated based upon the independent measurement of the conductivity, indicating that they originate predominantly from the electron diffusion. In contrast to earlier Hall-bar experiments, electron-phonon interaction does not lead to a phonon-drag contribution. This implies a description of the Onsager coefficients on the basis of a single transmission function, from which both thermovoltage and conductivity can be predicted with a single fitting parameter. Furthermore, it lets us predict a figure of merit for the efficiency of thermoelectric cooling, which becomes very large for partially filled Landau levels and high magnetic fields.

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