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Strain-Controlled Current Switching in Weyl Semimetals

S. M. Rafi-Ul-Islam*, Zhuo Bin Siu†, Chi Sun, and Mansoor B. A. Jalil‡

  • Department of Electrical and Computer Engineering, National University of Singapore, Singapore

  • *e0021595@u.nus.edu
  • †elesiuz@nus.edu.sg
  • ‡elembaj@nus.edu.sg
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Phys. Rev. Applied 14, 034007 – Published 2 September, 2020

DOI: https://doi.org/10.1103/PhysRevApplied.14.034007

Abstract

Applying strain to a Weyl semimetal (WSM) breaks its lattice symmetry and results in a valley-dependent strain gauge potential. Here, we investigate the application of the strain potential to modulate the valley and charge transport of a WSM-based n-p-n junction system. The strain potential, in combination with insulating barriers, enables modulation of the current and the realization of valley-asymmetric transmission with a high on:off ratio. By considering the geometric optics of electron waves and the transverse displacement of Fermi surfaces due to the strain gauge, we derive the critical strains for switching the current, as well as for the onset of complete angular separation of the two valley currents. The analytical results are verified by numerical calculations of the tunneling transmission and conductance. We also derive the expression for the subthreshold swing of the device, which can achieve values below the thermionic limit by tuning the strain and barrier height.

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References (63)

  1. E. Hwang and S. D. Sarma, Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene, Phys. Rev. B 77, 115449 (2008).
  2. K. I. Bolotin, K. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and H. Stormer, Ultrahigh electron mobility in suspended graphene, Solid State Commun. 146, 351 (2008).
  3. K. S. Novoselov, D. Jiang, F. Schedin, T. Booth, V. Khotkevich, S. Morozov, and A. K. Geim, Two-dimensional atomic crystals, Proc. Natl. Acad. Sci. 102, 10451 (2005).
  4. C.-C. Liu, W. Feng, and Y. Yao, Quantum Spin Hall Effect in Silicene and Two-Dimensional Germanium, Phys. Rev. Lett. 107, 076802 (2011).
  5. P. Vogt, P. De Padova, C. Quaresima, J. Avila, E. Frantzeskakis, M. C. Asensio, A. Resta, B. Ealet, and G. Le Lay, Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon, Phys. Rev. Lett. 108, 155501 (2012).
  6. M. Ezawa, A topological insulator and helical zero mode in silicene under an inhomogeneous electric field, New J. Phys. 14, 033003 (2012).
  7. C. Beenakker, Colloquium: Andreev reflection and Klein tunneling in graphene, Rev. Mod. Phys. 80, 1337 (2008).
  8. K. S. Novoselov, A. K. Geim, S. Morozov, D. Jiang, M. Katsnelson, I. Grigorieva, S. Dubonos, and A. Firsov, Two-dimensional gas of massless Dirac fermions in graphene, Nature 438, 197 (2005).
  9. Y. Zhang, Y.-W. Tan, H. L. Stormer, and P. Kim, Experimental observation of the quantum Hall effect and Berry’s phase in graphene, Nature 438, 201 (2005).
  10. C. Yesilyurt, S. G. Tan, G. Liang, and M. B. Jalil, Klein tunneling in Weyl semimetals under the influence of magnetic field, Sci. Rep. 6, 38862 (2016).
  11. M. Katsnelson, K. Novoselov, and A. Geim, Chiral tunnelling and the Klein paradox in graphene, Nat. Phys. 2, 620 (2006).
  12. U. Coskun, M. Brenner, T. Hymel, V. Vakaryuk, A. Levchenko, and A. Bezryadin, Distribution of Supercurrent Switching in Graphene under the Proximity Effect, Phys. Rev. Lett. 108, 097003 (2012).
  13. F. Zhai, Y. Ma, and Y.-T. Zhang, A valley-filtering switch based on strained graphene, J. Phys. Condens. Matter 23, 385302 (2011).
  14. R. N. Sajjad and A. W. Ghosh, High efficiency switching using graphene based electron “optics”, Appl. Phys. Lett. 99, 123101 (2011).
  15. T. Kawai, M. Poetschke, Y. Miyamoto, C. Rocha, S. Roche, and G. Cuniberti, Mechanically-induced transport switching effect in graphene-based nanojunctions, Phys. Rev. B 83, 241405 (2011).
  16. K. Sääskilahti, A. Harju, and P. Pasanen, Gate-controlled current switch in graphene, Appl. Phys. Lett. 95, 092104 (2009).
  17. B. Standley, W. Bao, H. Zhang, J. Bruck, C. N. Lau, and M. Bockrath, Graphene-based atomic-scale switches, Nano Lett. 8, 3345 (2008).
  18. Y. Wu, K. A. Jenkins, A. Valdes-Garcia, D. B. Farmer, Y. Zhu, A. A. Bol, C. Dimitrakopoulos, W. Zhu, F. Xia, and P. Avouris, State-of-the-art graphene high-frequency electronics, Nano Lett. 12, 3062 (2012).
  19. N. Meng, J. F. Fernandez, D. Vignaud, G. Dambrine, and H. Happy, Fabrication and characterization of an epitaxial graphene nanoribbon-based field-effect transistor, IEEE Trans. Electron Devices 58, 1594 (2011).
  20. Q. Wilmart, S. Berrada, D. Torrin, V. H. Nguyen, G. Fève, J.-M. Berroir, P. Dollfus, and B. Plaçais, A Klein-tunneling transistor with ballistic graphene, 2D Mater. 1, 011006 (2014).
  21. R. D. Hills, A. Kusmartseva, and F. Kusmartsev, Current-voltage characteristics of Weyl semimetal semiconducting devices, Veselago lenses, and hyperbolic Dirac phase, Phys. Rev. B 95, 214103 (2017).
  22. X. Wan, A. M. Turner, A. Vishwanath, and S. Y. Savrasov, Topological semimetal and Fermi-arc surface states in the electronic structure of pyrochlore iridates, Phys. Rev. B 83, 205101 (2011).
  23. H. Weng, C. Fang, Z. Fang, B. A. Bernevig, and X. Dai, Weyl Semimetal Phase in Noncentrosymmetric Transition-Metal Monophosphides, Phys. Rev. X 5, 011029 (2015).
  24. S.-Y. Xu, N. Alidoust, I. Belopolski, Z. Yuan, G. Bian, T.-R. Chang, H. Zheng, V. N. Strocov, D. S. Sanchez, G. Chang, et al., Discovery of a Weyl fermion state with Fermi arcs in niobium arsenide, Nat. Phys. 11, 748 (2015).
  25. X. Wan, A. Turner, A. Vishwanath, and S. Y. Savrasov, Electronic structure of pyrochlore iridates: From topological Dirac metal to Mott insulator, arXiv preprint arXiv:1007.0016 (2010).
  26. A. Burkov and L. Balents, Weyl Semimetal in a Topological Insulator Multilayer, Phys. Rev. Lett. 107, 127205 (2011).
  27. S. Rafi-Ul-Islam, Z. B. Siu, C. Sun, and M. bin Abdul Jalil, Realization of Weyl semimetal phases in topoelectrical circuits, New J. Phys. 22, 023025 (2020).
  28. S. Rafi-Ul-Islam, Z. B. Siu, and M. B. Jalil, Topoelectrical circuit realization of a Weyl semimetal heterojunction, Commun. Phys. 3, 1 (2020).
  29. C. Yesilyurt, Z. B. Siu, S. G. Tan, G. Liang, and M. B. Jalil, Conductance modulation in Weyl semimetals with tilted energy dispersion without a band gap, J. Appl. Phys. 121, 244303 (2017).
  30. Y. Yang, C. Bai, X. Xu, and Y. Jiang, Shot noise and electronic properties in the inversion-symmetric Weyl semimetal resonant structure, Nanotech. 29, 074002 (2018).
  31. T. O’Brien, M. Diez, and C. Beenakker, Magnetic Breakdown and Klein Tunneling in a type-II Weyl Semimetal, Phys. Rev. Lett. 116, 236401 (2016).
  32. C. Bai, Y. Yang, and K. Chang, Chiral tunneling in gated inversion symmetric Weyl semimetal, Sci. Rep. 6, 21283 (2016).
  33. M. Van Delft, S. Pezzini, T. Khouri, C. Müller, M. Breitkreiz, L. M. Schoop, A. Carrington, N. Hussey, and S. Wiedmann, Electron-Hole Tunneling Revealed by Quantum Oscillations in the Nodal-Line Semimetal HfSiS, Phys. Rev. Lett. 121, 256602 (2018).
  34. S. Li, A. Andreev, and B. Spivak, Klein tunneling and magnetoresistance of pn junctions in Weyl semimetals, arXiv preprint arXiv:1605.02799 (2016).
  35. S. Rafi-Ul-Islam, Z. B. Siu, and M. B. Jalil, Anti-Klein tunneling in topoelectrical Weyl semimetal circuits, Appl. Phys. Lett. 116, 111904 (2020).
  36. M. Y. Han, B. Özyilmaz, Y. Zhang, and P. Kim, Energy Band-Gap Engineering of Graphene Nanoribbons, Phys. Rev. Lett. 98, 206805 (2007).
  37. R. Balog, B. Jørgensen, L. Nilsson, M. Andersen, E. Rienks, M. Bianchi, M. Fanetti, E. Lægsgaard, A. Baraldi, S. Lizzit, et al., Bandgap opening in graphene induced by patterned hydrogen adsorption, Nat. Mater. 9, 315 (2010).
  38. T. Fujita, M. Jalil, and S. Tan, Valley filter in strain engineered graphene, Appl. Phys. Lett. 97, 043508 (2010).
  39. D. Pikulin, A. Chen, and M. Franz, Chiral Anomaly from Strain-Induced Gauge Fields in Dirac and Weyl Semimetals, Phys. Rev. X 6, 041021 (2016).
  40. T. Rauch, S. Achilles, J. Henk, and I. Mertig, Spin Chirality Tuning and Topological Semimetals in Strained HgTexS1−x, Phys. Rev. Lett. 114, 236805 (2015).
  41. D. Wang, L. Chen, X. Wang, G. Cui, and P. Zhang, The effect of substrate and external strain on electronic structures of stanene film, Phys. Chem. Chem. Phys. 17, 26979 (2015).
  42. F. Guinea, M. Katsnelson, and A. Geim, Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering, Nat. Phys. 6, 30 (2010).
  43. I. Zeljkovic, D. Walkup, B. A. Assaf, K. L. Scipioni, R. Sankar, F. Chou, and V. Madhavan, Strain engineering Dirac surface states in heteroepitaxial topological crystalline insulator thin films, Nat. Nanotechnol. 10, 849 (2015).
  44. Y. Liu, Y. Li, S. Rajput, D. Gilks, L. Lari, P. Galindo, M. Weinert, V. Lazarov, and L. Li, Tuning Dirac states by strain in the topological insulator Bi2Se3, Nat. Phys. 10, 294 (2014).
  45. E. J. Sie, C. M. Nyby, C. Pemmaraju, S. J. Park, X. Shen, J. Yang, M. C. Hoffmann, B. Ofori-Okai, R. Li, A. H. Reid, et al., An ultrafast symmetry switch in a Weyl semimetal, Nat. 565, 61 (2019).
  46. J. Hass, R. Feng, T. Li, X. Li, Z. Zong, W. De Heer, P. First, E. Conrad, C. Jeffrey, and C. Berger, Highly ordered graphene for two dimensional electronics, Appl. Phys. Lett. 89, 143106 (2006).
  47. S. Zhu, Y. Huang, N. N. Klimov, D. B. Newell, N. B. Zhitenev, J. A. Stroscio, S. D. Solares, and T. Li, Pseudomagnetic fields in a locally strained graphene drumhead, Phys. Rev. B 90, 075426 (2014).
  48. N. N. Klimov, S. Jung, S. Zhu, T. Li, C. A. Wright, S. D. Solares, D. B. Newell, N. B. Zhitenev, and J. A. Stroscio, Electromechanical properties of graphene drumheads, Science 336, 1557 (2012).
  49. F. Zhai and L. Yang, Strain-tunable spin transport in ferromagnetic graphene junctions, Appl. Phys. Lett. 98, 062101 (2011).
  50. Z.-Z. Cao, Y.-F. Cheng, and G.-Q. Li, Strain-controlled electron switch in graphene, Appl. Phys. Lett. 101, 253507 (2012).
  51. V. M. Pereira and A. C. Neto, Strain Engineering of Graphene’s Electronic Structure, Phys. Rev. Lett. 103, 046801 (2009).
  52. V. M. Pereira and A. H. C. Neto, All-graphene integrated circuits via strain engineering, arXiv preprint arXiv:0810.4539 (2008).
  53. F. Zhai, X. Zhao, K. Chang, and H. Xu, Magnetic barrier on strained graphene: A possible valley filter, Phys. Rev. B 82, 115442 (2010).
  54. Z. Xu, Z. B. Siu, Y. Chen, J. Huang, Y. Li, C. Sun, C. Yesilyurt, and M. B. Jalil, Group delay time and Harttman effect in strained Weyl semimetals, J. Phys. Condsen. Matter 32, 035301 (2020).
  55. S. Guan, Z.-M. Yu, Y. Liu, G.-B. Liu, L. Dong, Y. Lu, Y. Yao, and S. A. Yang, Artificial gravity field, astrophysical Analogues, and Topological Phase Transitions in Strained Topological Semimetals, npj Quantum Mater. 2, 1 (2017).
  56. Y. Sun, S.-C. Wu, M. N. Ali, C. Felser, and B. Yan, Prediction of Weyl semimetal in orthorhombic MoTe2, Phys. Rev. B 92, 161107 (2015).
  57. T. Bzdušek, A. Rüegg, and M. Sigrist, Weyl semimetal from spontaneous inversion symmetry breaking in pyrochlore oxides, Phys. Rev. B 91, 165105 (2015).
  58. H. Ma, P. Chen, B. Li, J. Li, R. Ai, Z. Zhang, G. Sun, K. Yao, Z. Lin, and B. Zhao, Thickness-tunable synthesis of ultrathin type-II Dirac semimetal PtTe2 single crystals and their thickness-dependent electronic properties, Nano Lett. 18, 3523 (2018).
  59. M. Goyal, H. Kim, T. Schumann, L. Galletti, A. A. Burkov, and S. Stemmer, Surface states of strained thin films of the Dirac semimetal Cd3As2, Phys. Rev. Mater. 3, 064204 (2019).
  60. Q. H. Wang and M. C. Hersam, Room-temperature molecular-resolution characterization of self-assembled organic monolayers on epitaxial graphene, Nat. Chem. 1, 206 (2009).
  61. L. Dell’Anna and A. De Martino, Wave-vector-dependent spin filtering and spin transport through magnetic barriers in graphene, Phys. Rev. B 80, 155416 (2009).
  62. T. Sohier and B. Yu, Ultralow-voltage design of graphene PN junction quantum reflective switch transistor, Appl. Phys. Lett. 98, 213104 (2011).
  63. R. N. Sajjad and A. W. Ghosh, Manipulating chiral transmission by gate geometry: Switching in graphene with transmission gaps, ACS Nano 7, 9808 (2013).

Outline

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Phys. Rev. Applied 14, 034007– Published 2 September, 2020
  • Received 5 March 2020
  • Revised 26 June 2020
  • Accepted 22 July 2020
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