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Sidewall Quantum Wires on GaAs(001) Substrates

Paul L.J. Helgers1,2,*, Haruki Sanada2, Yoji Kunihashi2, Antonio Rubino3, Christopher J.B. Ford3, Klaus Biermann1, and Paulo V. Santos1

  • 1Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e. V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
  • 2NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • 3Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, UK

  • *helgers@pdi-berlin.de
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Phys. Rev. Applied 11, 064017 – Published 10 June, 2019

DOI: https://doi.org/10.1103/PhysRevApplied.11.064017

Abstract

We study the structural, optical, and transport properties of sidewall quantum wires (QWRs) on GaAs(001) substrates. QWRs are grown by MBE on GaAs(001) substrates prepatterned with shallow ridges. They form as a consequence of material accumulation on the sidewalls of the ridges during the overgrowth of a quantum well (QW) on the patterned surface. The QWRs are approximately 200 nm wide and have emission energies red shifted by 27 meV with respect to the surrounding QW. Spatially resolved spectroscopic PL studies indicate that the QW thickness reduces around the QWRs, thus creating a 4-meV energy barrier for the transfer of carriers from the QW to the QWR. We show that the QWRs act as efficient channels for the transport of optically excited electrons and holes over tens of μm by a high-frequency surface acoustic wave (SAW). These results demonstrate the feasibility of efficient ambipolar transport in QWRs with submicrometer dimensions, photolithographically defined on GaAs substrates.

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Phys. Rev. Applied 11, 064017– Published 10 June, 2019
  • Received 10 January 2019
  • Revised 8 May 2019
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