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Giant, Anomalous Piezoimpedance in Silicon-on-insulator

H. Li1, C.T.K. Lew2, B.C. Johnson2, J.C. McCallum3, S. Arscott4, and A.C.H. Rowe1,*

  • 1Physique de la Matière Condensée, École Polytechnique, CNRS, Université Paris-Saclay, 91128 Palaiseau, France
  • 2Centre for Quantum Computation & Communication Technology, School of Physics,University of Melbourne, Melbourne, Victoria 3010, Australia
  • 3School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia
  • 4Institut d’Electronique, de Microélectronique et de Nanotechnologie, Université de Lille, CNRS, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d’Ascq, France

  • *alistair.rowe@polytechnique.edu
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Phys. Rev. Applied 11, 044010 – Published 3 April, 2019

DOI: https://doi.org/10.1103/PhysRevApplied.11.044010

Abstract

A giant, anomalous piezoresponse of fully depleted silicon-on-insulator devices under mechanical stress is demonstrated by impedance spectroscopy. This piezoresponse strongly depends on the measurement frequency, ω, and consists of both a piezoresistance (PZR) and a piezocapacitance, whose maximum values are −1100×10−11 and −900×10−11Pa−1, respectively. These values should be compared with the usual bulk PZR in p-type silicon, 70×10−11Pa−1. The observations are well described by models of space-charge-limited hole currents in the presence of fast electronic traps having stress-dependent capture rates (ωc) and emission rates. Under steady-state conditions (i.e., when ω≪ωc), where the impedance-spectroscopy measurements yield results that are directly comparable with those of previously published reports of PZR in depleted, silicon nano-objects, the overall piezoresponse is just the usual, bulk silicon PZR. Anomalous PZR is observed only under non-steady-state conditions when ω≈ωc, with a symmetry suggesting that the electromechanically active fast traps are native Pb0 interface defects. The observations suggest new functionalities for fully depleted silicon-on-insulator, and shed light on the debate over the PZR of carrier-depleted nanosilicon.

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Phys. Rev. Applied 11, 044010– Published 3 April, 2019
  • Received 17 October 2018
  • Revised 28 January 2019
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