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Ionization efficiency for nuclear recoils in silicon from about 50 eV to 3 MeV

Y. Sarkis, A. Aguilar-Arevalo, and J. C. D'Olivo

  • Instituto de Ciencias Nucleares, Universidad Nacional Autónoma de México, 04510 CDMX, Mexico

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Phys. Rev. A 107, 062811 – Published 13 June, 2023

DOI: https://doi.org/10.1103/PhysRevA.107.062811

Abstract

We perform a calculation of the nuclear recoil ionization efficiency in silicon using an improved version of Lindhard's theory, in which atomic bond breaking is modeled as a function of the initial ionic energy, the interatomic potential, and the average energy for ion-vacancy pair production. Better descriptions of the effects due to electronic stopping and straggling, charge screening, and Coulomb repulsion between ions are also incorporated. Our model provides a good description of the available data over nearly four orders of magnitude of nuclear recoil energy.

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See Also

Study of the ionization efficiency for nuclear recoils in pure crystals

Y. Sarkis, Alexis Aguilar-Arevalo, and Juan Carlos D’Olivo
Phys. Rev. D 101, 102001 (2020)

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Phys. Rev. A 107, 062811– Published 13 June, 2023
  • Received 13 September 2022
  • Revised 15 May 2023
  • Accepted 30 May 2023
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