- Physical Review Journals
All JournalsPhysics Magazine

PRX Quantum

Reuse & Permissions

It is not necessary to obtain permission to reuse this article or its components as it is available under the terms of the Creative Commons Attribution 4.0 International license. This license permits unrestricted use, distribution, and reproduction in any medium, provided attribution to the author(s) and the published article's title, journal citation, and DOI are maintained. Please note that some figures may have been included with permission from other third parties. It is your responsibility to obtain the proper permission from the rights holder directly for these figures.

Export citation

Export citation

Choose format for download:

Download Citation
  • Open Access

Spin Readout of a CMOS Quantum Dot by Gate Reflectometry and Spin-Dependent Tunneling

Virginia N. Ciriano-Tejel1,2,*, Michael A. Fogarty1,2, Simon Schaal1,2, Louis Hutin3, Benoit Bertrand3, Lisa Ibberson4, M. Fernando Gonzalez-Zalba4,‡, Jing Li5, Yann-Michel Niquet5 et al.

Maud Vinet3 and John J.L. Morton1,2,6,†

  • 1London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom
  • 2Quantum Motion Technologies, Windsor House, Cornwall Road, Harrogate HG1 2PW, United Kingdom
  • 3CEA, LETI, Minatec Campus, F-38054 Grenoble, France
  • 4Hitachi Cambridge Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
  • 5Université Grenoble Alpes, CEA, IRIG-MEM-L_Sim, F-38000 Grenoble, France
  • 6Department of Electronic and Electrical Engineering, UCL, London WC1E 7JE, United Kingdom

  • *virginia.ciriano.17@ucl.ac.uk
  • †jjl.morton@ucl.ac.uk
  • ‡Present address: Quantum Motion Technologies, Windsor House, Cornwall Road, Harrogate, HG1 2PW, United Kingdom.
PDF

PRX Quantum 2, 010353 – Published 31 March, 2021

DOI: https://doi.org/10.1103/PRXQuantum.2.010353

Abstract

Silicon spin qubits are promising candidates for realizing large-scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly occupied gate-defined quantum dot, fabricated using CMOS-compatible processes at the 300-mm wafer scale. For readout, we employ spin-dependent tunneling combined with a low-footprint single-lead quantum-dot charge sensor, measured using rf gate reflectometry. We demonstrate spin readout in two devices using this technique, obtaining valley splittings in the range 0.5–0.7 meV using excited-state spectroscopy, and measure a maximum electron-spin relaxation time (T1) of 9±3 s at 1 T. These long lifetimes indicate the silicon-nanowire geometry and fabrication processes employed here show a great deal of promise for qubit devices, while the spin-readout method demonstrated here is well suited to a variety of scalable architectures.

View figure in article

Physics Subject Headings (PhySH)

Popular Summary

The same silicon technology used in conventional integrated circuits can be exploited for a physical realization of a qubit, the unit cell of a quantum computer. In this approach, information is encoded in the spin degree of freedom of an electron confined in a nanoscale semiconductor device known as a quantum dot. The small size of the quantum dots enables a high qubit density similar to the density of transistors in current processors. To reach the full potential in qubit density, and thus in quantum-computer performance, qubits need to be manufactured using industrial mass fabrication techniques while the footprint of circuits fabricated alongside each qubit for readout or control needs to be minimized. Our work addresses both issues, evaluating whether CMOS-compatible manufacturing processes performed at the scale of 300-mm wafers can be used to make long-lived spin qubits combined with a reduced-footprint readout method.

The readout of an electron spin trapped in the dot is performed by conditioning its tunneling to an electric reservoir on its spin polarization. Such a tunneling event disturbs the potential of a neighbor “sensor” dot, which is constantly monitored. To do so, a small oscillating rf signal sent to the sensor gate electrode is continuously attempting to move an electron between the sensor dot and the reservoir. The breakdown of this dynamic equilibrium due to spin-dependent tunneling is measured as a change in the dot capacitance.

Our results show long relaxation times measured using a compact readout setup, positioning CMOS-compatible devices as potential high-quality qubits compatible with scalable manufacturing.

Article Text

References (67)

  1. D. Loss and D.P. DiVincenzo, Quantum computation with quantum dots, Phys. Rev. A 57, 120 (1998).
  2. J. Yoneda, K. Takeda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, T. Honda, T. Kodera, S. Oda, Y. Hoshi, N. Usami, K. M. Itoh, and S. Tarucha, A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%, Nat. Nanotechnol. 13, 102 (2018).
  3. M. Urdampilleta, D. J. Niegemann, E. Chanrion, B. Jadot, C. Spence, P. A. Mortemousque, C. Bäuerle, L. Hutin, B. Bertrand, S. Barraud, R. Maurand, M. Sanquer, X. Jehl, S. De Franceschi, M. Vinet, and T. Meunier, Gate-based high fidelity spin readout in a CMOS device, Nat. Nanotechnol. 14, 737 (2019).
  4. E. J. Connors, J. J. Nelson, and J. M. Nichol, Rapid High-Fidelity Spin-State Readout in Si/Si-Ge Quantum Dots via rf Reflectometry, Phys. Rev. Appl. 13, 024019 (2020).
  5. J. Yoneda, K. Takeda, A. Noiri, T. Nakajima, S. Li, J. Kamioka, T. Kodera, and S. Tarucha, Quantum non-demolition readout of an electron spin in silicon, Nat. Commun. 11, 1144 (2020).
  6. M. Veldhorst, J. C. C. Hwang, C. H. Yang, A. W. Leenstra, B. De Ronde, J. P. Dehollain, J. T. Muhonen, F. E. Hudson, K. M. Itoh, A. Morello, and A. S. Dzurak, An addressable quantum dot qubit with fault-tolerant control-fidelity, Nat. Nanotechnol. 9, 981 (2014).
  7. E. Kawakami, P. Scarlino, D. R. Ward, F. R. Braakman, D. E. Savage, M. G. Lagally, M. Friesen, S. N. Coppersmith, M. A. Eriksson, and L. M. K. Vandersypen, Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot, Nat. Nanotechnol. 9, 666 (2014).
  8. M. Veldhorst, C. H. Yang, J. C. C. Hwang, W. Huang, J. P. Dehollain, J. T. Muhonen, S. Simmons, A. Laucht, F. E. Hudson, K. M. Itoh, A. Morello, and A. S. Dzurak, A two-qubit logic gate in silicon, Nature 526, 410 (2015).
  9. D. M. Zajac, A. J. Sigillito, M. Russ, F. Borjans, J. M. Taylor, G. Burkard, and J. R. Petta, Resonantly driven CNOT gate for electron spins, Science 359, 439 (2018).
  10. T. F. Watson, S. G. Philips, E. Kawakami, D. R. Ward, P. Scarlino, M. Veldhorst, D. E. Savage, M. G. Lagally, M. Friesen, S. N. Coppersmith, M. A. Eriksson, and L. M. K Vandersypen, A programmable two-qubit quantum processor in silicon, Nature 555, 633 (2018).
  11. X. Xue, T. F. Watson, J. Helsen, D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson, S. Wehner, and L. M. K Vandersypen, Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device, Phys. Rev. X 9, 021011 (2019).
  12. R. Maurand, X. Jehl, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer, and S. De Franceschi, A CMOS silicon spin qubit, Nat. Commun. 7, 13575 (2016).
  13. K. Ono, D. Austing, Y. Tokura, and S. Tarucha, Current rectification by pauli exclusion in a weakly coupled double quantum dot system, Science 297, 1313 (2002).
  14. J. M. Elzerman, R. Hanson, L. H. Van Beveren, B. Witkamp, L. M. K Vandersypen, and L. P. Kouwenhoven, Single-shot read-out of an individual electron spin in a quantum dot, Nature 430, 431 (2004).
  15. A. West, B. Hensen, A. Jouan, T. Tanttu, C. H. Yang, A. Rossi, M. F. Gonzalez-Zalba, F. E. Hudson, A. Morello, D. J. Reilly, and A. S. Dzurak, Gate-based single-shot readout of spins in silicon, Nat. Nanotechnol. 14, 437 (2019).
  16. G. Zheng, N. Samkharadze, M. L. Noordam, N. Kalhor, D. Brousse, A. Sammak, G. Scappucci, and L. M. K. Vandersypen, Rapid gate-based spin read-out in silicon using an on-chip resonator, Nat. Nanotechnol. 14, 742 (2019).
  17. P. Pakkiam, A. V. Timofeev, M. G. House, M. R. Hogg, T. Kobayashi, M. Koch, S. Rogge, and M. Y. Simmons, Single-Shot Single-Gate rf Spin Readout in Silicon, Phys. Rev. X 8, 41032 (2018).
  18. A. Morello, J. J. Pla, F. A. Zwanenburg, K. W. Chan, K. Y. Tan, H. Huebl, M. Mottonen, C. D. Nugroho, C. Yang, J. A. Van Donkelaar, A. D. Alves, D. N. Jamieson, C. C. Escott, L. C. Hollenberg, R. G. Clark, and A. S. Dzurak, Single-shot readout of an electron spin in silicon, Nature 467, 687 (2010).
  19. T. F. Watson, B. Weber, M. G. House, H. Büch, and M. Y. Simmons, High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D-Charge State, Phys. Rev. Lett. 115, 166806 (2015).
  20. M. Fogarty, K. Chan, B. Hensen, W. Huang, T. Tanttu, C. Yang, A. Laucht, M. Veldhorst, F. E. Hudson, K. M. Itoh, et al., Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout, Nat. Commun. 9, 4370 (2018).
  21. R. Zhao, T. Tanttu, K. Y. Tan, B. Hensen, K. W. Chan, J. C. C. Hwang, R. Leon, C. H. Yang, W. Gilbert, F. E. Hudson, et al., Single-spin qubits in isotopically enriched silicon at low magnetic field, Nat. Commun. 10, 5500 (2019).
  22. P. Harvey-Collard, B. D’Anjou, M. Rudolph, N. T. Jacobson, J. Dominguez, G. A. TenEyck, J. R. Wendt, T. Pluym, M. P. Lilly, W. A. Coish, M. Pioro-Ladriere, and M. S. Carroll, High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism, Phys. Rev. X 8, 021046 (2018).
  23. M. J. Curry, M. Rudolph, T. England, A. Mounce, R. Jock, C. Bureau-Oxton, P. Harvey-Collard, P. Sharma, J. Anderson, D. Campbell, et al., Single-shot readout performance of two heterojunction-bipolar-transistor amplification circuits at millikelvin temperatures, Sci. Rep. 9, 16976 (2019).
  24. M. G. House, I. Bartlett, P. Pakkiam, M. Koch, E. Peretz, J. vanderHeijden, T. Kobayashi, S. Rogge, and M. Y. Simmons, High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation, Phys. Rev. Appl. 6, 044016 (2016).
  25. E. Chanrion, D. J. Niegemann, B. Bertrand, C. Spence, B. Jadot, J. Li, P.-A. Mortemousque, L. Hutin, R. Maurand, X. Jehl, M. Sanquer, S. De Franceschi, C. B äuerle, F. Balestro, Y.-M. Niquet, M. Vinet, T. Meunier, and M. Urdampilleta, Charge detection in an array of CMOS quantum dots, arXiv:2004.01009.
  26. F. Ansaloni, A. Chatterjee, H. Bohuslavskyi, B. Bertrand, L. Hutin, M. Vinet, and F. Kuemmeth, Single-electron control in a foundry-fabricated two-dimensional qubit array, arXiv:2004.00894.
  27. F. Persson, C. M. Wilson, M. Sandberg, G. Johansson, and P. Delsing, Excess dissipation in a single-electron box: The sisyphus resistance, Nano Lett. 10, 953 (2010).
  28. M. F. Gonzalez-Zalba, S. Barraud, A. J. Ferguson, and A. C. Betz, Probing the limits of gate-based charge sensing, Nat. Commun. 6, 6084 (2015).
  29. B. Voisin, V. H. Nguyen, J. Renard, X. Jehl, S. Barraud, F. Triozon, M. Vinet, I. Duchemin, Y. M. Niquet, S. De Franceschi, and M. Sanquer, Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor, Nano Lett. 14, 2094 (2014).
  30. I. Ahmed, J. A. Haigh, S. Schaal, S. Barraud, Y. Zhu, C. M. Lee, M. Amado, J. W. A. Robinson, A. Rossi, J. J. L. Morton, and M. F. Gonzalez-Zalba, Radio-Frequency Capacitive Gate-Based Sensing, Phys. Rev. Appl. 10, 014018 (2018).
  31. T. Lundberg, J. Li, L. Hutin, B. Bertrand, D. J. Ibberson, C.-M. Lee, D. J. Niegemann, M. Urdampilleta, N. Stelmashenko, T. Meunier, J. W. A. Robinson, L. Ibberson, M. Vinet, Y. M. Niquet, and M. F. Gonzalez-Zalba, A spin quintet in a silicon double quantum dot: spin blockade and relaxation, arXiv:1910.10118.
  32. D. J. Ibberson, L. Bourdet, J. C. Abadillo-Uriel, I. Ahmed, S. Barraud, M. J. Calderón, Y. M. Niquet, and M. F. Gonzalez-Zalba, Electric-field tuning of the valley splitting in silicon corner dots, Appl. Phys. Lett. 113, 053104 (2018).
  33. S. Schaal, I. Ahmed, J. A. Haigh, L. Hutin, B. Bertrand, S. Barraud, M. Vinet, C.-M. Lee, N. Stelmashenko, J. W. A. Robinson, J. Y. Qiu, S. Hacohen-Gourgy, I. Siddiqi, M. F. Gonzalez-Zalba, and J. J. L. Morton, Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification, Phys. Rev. Lett. 124, 67701 (2020).
  34. B. A. Glavin and K. W. Kim, Spin-lattice relaxation in Si quantum dots, Phys. Rev. B 68, 045308 (2003).
  35. C. H. Yang, A. Rossi, R. Ruskov, N. S. Lai, F. A. Mohiyaddin, S. Lee, C. Tahan, G. Klimeck, A. Morello, and A. S. Dzurak, Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting, Nat. Commun. 4, 2069 (2013).
  36. C. Tahan and R. Joynt, Relaxation of excited spin, orbital, and valley qubit states in ideal silicon quantum dots, Phys. Rev. B 89, 075302 (2014).
  37. L. Bourdet and Y. M. Niquet, All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing, Phys. Rev. B 97, 155433 (2018).
  38. A. Corna, L. Bourdet, R. Maurand, A. Crippa, D. Kotekar-Patil, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, X. Jehl, M. Vinet, S. De Franceschi, Y. M. Niquet, and M. Sanquer, Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot, npj Quantum Inf. 4, 6 (2018).
  39. C. Tahan and R. Joynt, Relaxation of excited spin, orbital, and valley qubit states in ideal silicon quantum dots, Phys. Rev. B 89, 075302 (2014).
  40. P. Scarlino, E. Kawakami, P. Stano, M. Shafiei, C. Reichl, W. Wegscheider, and L. M. K. Vandersypen, Spin-Relaxation Anisotropy in a GaAs Quantum Dot, Phys. Rev. Lett. 113, 256802 (2014).
  41. K. MacLean, S. Amasha, I. P. Radu, D. M. Zumbühl, M. A. Kastner, M. P. Hanson, and A. C. Gossard, Energy-Dependent Tunneling in a Quantum Dot, Phys. Rev. Lett. 98, 036802 (2007).
  42. S. Amasha, K. MacLean, I. P. Radu, D. M. Zumbühl, M. A. Kastner, M. P. Hanson, and A. C. Gossard, Spin-dependent tunneling of single electrons into an empty quantum dot, Phys. Rev. B 78, 041306(R) (2008).
  43. M. Friesen, C. Tahan, R. Joynt, and M. A. Eriksson, Spin Readout and Initialization in a Semiconductor Quantum Dot, Phys. Rev. Lett. 92, 037901 (2004).
  44. C. B. Simmons, J. R. Prance, B. J. Van Bael, T. S. Koh, Z. Shi, D. E. Savage, M. G. Lagally, R. Joynt, M. Friesen, S. N. Coppersmith, and M. A. Eriksson, Tunable Spin Loading and T1 of a Silicon Spin Qubit Measured by Single-Shot Readout, Phys. Rev. Lett. 106, 156804 (2011).
  45. A. Hollmann, T. Struck, V. Langrock, A. Schmidbauer, F. Schauer, T. Leonhardt, K. Sawano, H. Riemann, N. V. Abrosimov, D. Bougeard, and L. R. Schreiber, Large, Tunable Valley Splitting and Single-Spin Relaxation Mechanisms in a Si/SixGe1−x Quantum Dot, Phys. Rev. Appl. 13, 034068 (2020).
  46. P. Huang and X. Hu, Spin relaxation in a Si quantum dot due to spin-valley mixing, Phys. Rev. B 90, 235315 (2014).
  47. L. Petit, J. M. Boter, H. G. J. Eenink, G. Droulers, M. L. V. Tagliaferri, R. Li, D. P. Franke, K. J. Singh, J. S. Clarke, R. N. Schouten, V. V. Dobrovitski, L. M. K Vandersypen, and M. Veldhorst, Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits, Phys. Rev. Lett. 121, 076801 (2018).
  48. X. Zhang, R.-z. Hu, H.-o. Li, F.-m. Jing, Y. Zhou, R.-L. Ma, M. Ni, G. Luo, G. Cao, G.-L. Wang, X. Hu, H.-W. Jiang, G.-C. Guo, and G.-P. Guo, Giant Anisotropy of Spin Relaxation and Spin-Valley Mixing in a Silicon Quantum Dot, Phys. Rev. Lett. 124, 257701 (2020).
  49. F. Borjans, D. M. Zajac, T. M. Hazard, and J. R. Petta, Single-Spin Relaxation in a Synthetic Spin-Orbit Field, Phys. Rev. Appl. 11, 044063 (2019).
  50. M. O. Nestoklon, L. E. Golub, and E. L. Ivchenko, Spin and valley-orbit splittings in SiGe/Si heterostructures, Phys. Rev. B 73, 235334 (2006).
  51. M. Veldhorst, R. Ruskov, C. H. Yang, J. C. C. Hwang, F. E. Hudson, M. E. Flatté, C. Tahan, K. M. Itoh, A. Morello, and A. S. Dzurak, Spin-orbit coupling and operation of multi-valley spin qubits, Phys. Rev. B 92, 201401(R) (2015).
  52. D. Keith, M. G. House, M. B. Donnelly, T. F. Watson, B. Weber, and M. Y. Simmons, Single-Shot Spin Readout in Semiconductors Near the Shot-Noise Sensitivity Limit, Phys. Rev. X 9, 41003 (2019).
  53. D. J. Ibberson, T. Lundberg, J. A. Haigh, L. Hutin, B. Bertrand, S. Barraud, C.-M. Lee, N. A. Stelmashenko, J. W. A. Robinson, M. Vinet, M. F. Gonzalez-Zalba, and L. A. Ibberson, Large dispersive interaction between a CMOS double quantum dot and microwave photons, arXiv:2004.00334.
  54. L. Hutin, et al., in 2019 IEEE International Electron Devices Meeting (IEDM) (2019), p. 37.7.1.
  55. Z. Cai, Resource estimation for quantum variational simulations of the Hubbard model: The advantage of multi-core NISQ processing, arXiv:1910.02719.
  56. C. Cade, L. Mineh, A. Montanaro, and S. Stanisic, Strategies for solving the Fermi-Hubbard model on near-term quantum computers, arXiv:1912.06007.
  57. T. Fujita, T. A. Baart, C. Reichl, W. Wegscheider, and L. M. K. Vandersypen, Coherent shuttle of electron-spin states, npj Quantum Inf. 3, 22 (2017).
  58. A. J. Sigillito, M. J. Gullans, L. F. Edge, M. Borselli, and J. R. Petta, Coherent transfer of quantum information in a silicon double quantum dot using resonant SWAP gates, npj Quantum Inf. 5, 110 (2019).
  59. X. Yuan, S. Endo, Q. Zhao, Y. Li, and S. C. Benjamin, Theory of variational quantum simulation, Quantum 3, 191 (2019).
  60. http://mos-quito.eu.
  61. M. Xiao, M. G. House, and H. W. Jiang, Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot, Phys. Rev. Lett. 104, 096801 (2010).
  62. C. A. Ulrich, Semiconductor nanostructures, Lect. Notes Phys. 706, 271 (2006).
  63. W. G. Van der Wiel, S. De Franceschi, J. M. Elzerman, T. Fujisawa, S. Tarucha, and L. P. Kouwenhoven, Electron transport through double quantum dots, Rev. Mod. Phys. 75, 1 (2002).
  64. I. Ahmed, A. Chatterjee, S. Barraud, J. J. L. Morton, J. A. Haigh, and M. F. Gonzalez-Zalba, Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot, Commun. Phys. 1, 66 (2018).
  65. B. Venitucci, J. Li, L. Bourdet, and Y. Niquet, in 2019 Int. Conf. on Simulation of Semiconductor Processes and Devices, Udine, Italy (2019), p. 1.
  66. X. Zhang, R. Z. Hu, H. O. Li, F. M. Jing, and Y. Zhou, Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot, arXiv:1912.08365.
  67. R. Hanson, L. P. Kouwenhoven, J. R. Petta, S. Tarucha, and L. M. K. Vandersypen, Spins in few-electron quantum dots, Rev. Mod. Phys. 79, 1217 (2007).

Outline

Information

PRX Quantum 2, 010353– Published 31 March, 2021
  • Received 16 May 2020
  • Revised 12 October 2020
  • Accepted 24 February 2021
Crossmark - Check for updates button
Creative Commons Logo

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation