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Mean Lives of Some States in Si31 below 3.54 MeV

M. J. Wozniak, Jr.* and D. J. Donahue

  • Department of Physics, University of Arizona, Tucson, Arizona 85721

  • *Present address: University of Wisconsin, Madison, Wisc. 53706.

Phys. Rev. C 1, 601 – Published 1 February, 1970

DOI: https://doi.org/10.1103/PhysRevC.1.601

Abstract

A Ge(Li) detector and the reaction Si30(d, p)Si31 with Ed=24 MeV are used in the coincidence version of the Doppler-shift attenuation method to obtain the following information concerning the mean lives of some low-lying states in Si31: τ(0.75 MeV)=(7.21.8+2.6)×1013 sec, τ(1.69 MeV)=(7.4±2.3)×1013 sec, τ(2.32 MeV)<3×1013 sec, τ(3.14 MeV)=(5.02.6+2.2)×1013 sec, τ(3.53 MeV)<3.7×1014 sec. From these results, the reduced matrix elements for electromagnetic transitions among some of these states are obtained. A comparison is made between these reduced matrix elements and those predicted by the extreme single-particle model, the Nilsson rotational model, and the shell model with configuration mixing in the 2s12 and 1d32 shells. Our results indicate a value of |η|=2.80.4+0.5 for the Nilsson deformation parameter for Si31. A value of 752±1 keV was obtained for the excitation energy of the 0.75-MeV state.

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