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Gold as a Donor in Silicon

E. A. Taft and F. Hubbard Horn

General Electric Research Laboratory, Schenectady, New York

Phys. Rev. 93, 64 – Published 1 January, 1954

DOI: https://doi.org/10.1103/PhysRev.93.64

Abstract

Resistivity-temperature data show gold produces a donor level 0.33 ev above the occupied band in silicon.

References (2)

E. J. Ryder, Phys. Rev. 90, 766 (1953)
W. C. Dunlap, Jr., Phys. Rev. 91, 208, 1282 (1953)