Skip to Main Content

Access Provided by Xinjiang University

Physical Review Journals Archive

Access by Xinjiang University

Effects of Electrical Forming on the Rectifying Barriers of $n$ - and $p$ -Germanium Transistors

J. Bardeen and W. G. Pfann

Bell Telephone Laboratories, Murray Hill, New Jersey

Phys. Rev. 77, 401 – Published 1 February, 1950

DOI: https://doi.org/10.1103/PhysRev.77.401

References (3)

J. H. Bardeen and W. H. Brattain, Phys. Rev. 75, 1208 (1949)
W. G. Pfann and J. H. Scaff, Phys. Rev. 76, 459 (1949)
Omitted endnote