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  • Access by Xinjiang University

On the Silicon Oxide Bands

L. H. Woods

  • Ryerson Physical Laboratory, University of Chicago, Chicago, Illinois

Phys. Rev. 63, 426 – Published 1 June, 1943

DOI: https://doi.org/10.1103/PhysRev.63.426

Abstract

Pankhurst has described a band spectrum believed by him to belong to an oxide of silicon, possibly SiO2. A better excitation of the same bands has been obtained from a similar source (a high voltage uncondensed discharge through a constriction in a quartz tube), but in helium gas instead of hydrogen. These bands have been photographed on the 30-foot, 30,000 lines per inch Chicago grating spectrograph. A band near λ3840 has been resolved in the first and second orders and found to be a (0,0) transition, overlapped by a weak (1,1) transition, of the type Σ2Σ2, having the constants {ν(0,0)=26,015.05 cm1,,ν(1,1)=25,991.44cm1,}{B0=0.7180cm1,,B1=0.704cm1,}{B0=0.7253cm1,,B1=0.712cm1.} The coefficients of the spin doubling for the two states are γ0=+0.012 cm1, γ0=+0.002 or γ0=+0.022 cm1, the value of γ0 not certainly fixed as between these two alternatives. The doublet structure and the B values prove that the emitter is SiO+. Other bands at λ4270 have been resolved with weak intensity and tentatively ascribed to SiO2.

References (6)

  1. R. C. Pankhurst, Proc. Phys. Soc. 52, 707 (1940)
  2. W. H. B. Cameron, Phil. Mag. 3, 110 (1927)
  3. Zintl, Bräuning, Grube, Krings, and Morawietz, Zeits. f. anorg. allgem. Chemie 245, 1-7 (1940) Chem. Abs. 35, 1719 (1941)
  4. G. Herzberg, Molecular Spectra and Molecular Structure (1939), p. 274
  5. L. H. Woods, Phys. Rev. 63, 431 (1943)
  6. [4], p. 199

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