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The Molecular Process of Crystal Growth in Hexagonal Metals. Deposition upon Monocrystalline Hemispheres of Zinc
Phys. Rev. 40, 596 – Published 15 May, 1932
DOI: https://doi.org/10.1103/PhysRev.40.596
Abstract
The growth of a single crystal rod of zinc is allowed to proceed from a small orifice into a mass of molten zinc and the monocrystalline hemisphere thus formed isolated by rotation of the apparatus. The hemisphere is subjected to uniform bombardment by zinc vapor and observation of the growth on its surface forms the basis for a study of the variation of depositional rate with crystal surface structure. It is assumed, with Kossel and Stranski, that the force acting upon an atom which has struck the crystal surface is qualitatively proportional to the number of contiguous lattice atoms and a "force series" is drawn up listing the relative depositional energies for eleven typical positions of different crystal surface structure. With the aid of this force series the macroscopically observed growth on the experimental crystal is interpreted in terms of atom-by-atom deposition.
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