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Defect Cluster Centers in MgO

Y. Chen, R. T. Williams*, and W. A. Sibley

  • Solid State Division, Oak Ridge Hational Laboratory, operated by Union Carbide Corporation for the U. S. Atomic Energy Commission, Oak Ridge, Tenenssee 37830

  • *Oak Ridge Associated Universities Undergraduate Research Participant from Wake Forest University, now at Princeton University, Princeton, N. J.

Phys. Rev. 182, 960 – Published 15 June, 1969

DOI: https://doi.org/10.1103/PhysRev.182.960

Abstract

A study of the production and annealing of defect cluster centers in MgO single crystals has been undertaken. A comparison of the annealing of single negative-ion vacancies in neutron-irradiated, electron-irradiated, and Mg-additively colored samples is made. The results indicate that isolated negative-ion vacancies are not mobile below 900°C, and the annealing of these defects at lower temperatures in irradiated crystals is due to interstitial migration. The broad absorption bands at 352, 573, and 975 nm and the zero-phonon lines observed in neutron-irradiated crystals, previously proposed as due to F-aggregate centers, are not observed in electron-irradiated and additively colored samples even after annealing. Therefore, there is some uncertainity whether these lines and/or bands are due to F-aggregate centers.

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