The isothermal magnetoresistivity and Hall resistivity in a monocrystal of arsenic have been studied at temperatures of liquid helium in fields up to 25 kG. All measurements were taken in the basal plane of the crystal with magnetic field perpendicular to the plane and parallel to the trigonal axis. The binary axis was in the basal plane and parallel to the long dimension of the crystal. The magnetoconductivity tensor element ${\sigma }_{11}$ and the Hall conductivity element ${\sigma }_{12}$ were constructed from resistivity data and analyzed in terms of two-and three-band models. A least-squares curve fitting of the conductivities to the quasiclassical model of Sondheimer and Wilson indicates two major energy bands of carriers. The Hall effect is positive. The high-mobility carriers are holes with mobility approximately four times that of the equally populous electrons. The carrier concentration is $n\simeq \frac{2\times {10}^{20}}{{\mathrm{cm}}^3}$ if determined from ${\sigma }_{11}$ data along with effective-mass anisotropy data established from quantum-oscillation studies. Simultaneous curve fitting of the ${\sigma }_{11}$ and ${\sigma }_{12}$ data gives $n\simeq \frac{0.7\times {10}^{20}}{{\mathrm{cm}}^3}$.

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