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Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair
Phys. Rev. 155, 802 – Published 15 March, 1967
DOI: https://doi.org/10.1103/PhysRev.155.802
Abstract
An EPR spectrum produced in aluminum-doped silicon by 1.5-MeV electron irradiation is described. Labeled Si G9, it is identified as arising from an aluminum-vacancy pair, presumably formed when a mobile lattice vacancy is trapped by substitutional aluminum. The resonance is observed only upon illumination and is identified as a long-lived excited triplet () state of the defect. The observed hyperfine interactions with and neighboring nuclei, as well as the tensor and axial fine-structure term , are discussed in terms of a simple model of the defect using a linear combination of atomic orbitals. No Jahn-Teller distortion is observed in this excited state, as is consistent with the predictions of the model. Preferential alignment of the aluminum-vacancy axis direction in the lattice is achieved by stressing the crystal at ∼200°C. The magnitude and sense of the alignment is consistent with the prediction of the model that the ground state is a Jahn-Teller distorted state similar to the phosphorus-vacancy pair previously studied. Abnormally strong nuclear hyperfine transitions are observed in the EPR spectrum, and the theory of this effect, found only in an even-spin system, is developed. Emission is observed for some of the lines in the spectrum similar to that reported by Tanimoto et al. for another photoexcited system. The origin of this effect is discussed in terms of the model.
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