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Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair

G. D. Watkins

  • General Electric Research and Development Center, Schenectady, New York

Phys. Rev. 155, 802 – Published 15 March, 1967

DOI: https://doi.org/10.1103/PhysRev.155.802

Abstract

An EPR spectrum produced in aluminum-doped silicon by 1.5-MeV electron irradiation is described. Labeled Si G9, it is identified as arising from an aluminum-vacancy pair, presumably formed when a mobile lattice vacancy is trapped by substitutional aluminum. The resonance is observed only upon illumination and is identified as a long-lived excited triplet (S=1) state of the defect. The observed hyperfine interactions with Al27 and neighboring Si29 nuclei, as well as the g tensor and axial fine-structure term D, are discussed in terms of a simple model of the defect using a linear combination of atomic orbitals. No Jahn-Teller distortion is observed in this excited state, as is consistent with the predictions of the model. Preferential alignment of the aluminum-vacancy axis direction in the lattice is achieved by stressing the crystal at ∼200°C. The magnitude and sense of the alignment is consistent with the prediction of the model that the ground state is a Jahn-Teller distorted state similar to the phosphorus-vacancy pair previously studied. Abnormally strong Δm0 nuclear hyperfine transitions are observed in the EPR spectrum, and the theory of this effect, found only in an even-spin system, is developed. Emission is observed for some of the lines in the spectrum similar to that reported by Tanimoto et al. for another photoexcited S=1 system. The origin of this effect is discussed in terms of the model.

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