Some measurements by Mette and Boatright of the photo-magneto-electric (PME) open-circuit voltage $V$ at 25°C in Si have been reanalyzed on the basis of a simple photodissociation model. Good agreement between the predictions of the model and the data is obtained. The main results are expressed by the proportionality $V\propto B{(\Delta W\times I)}^{\frac{1}{2}}$, where $B$ is the magnetic induction, $\Delta W$ is the excess photon energy above a threshold (found to be 1.08 eV), and $I$ is the photon flux density. $V$ is also predicted to be proportional to $\exp \left(\frac{\Delta G_r}{\mathrm{kT}}\right)$, where $\Delta G_r$ is the Gibbs function associated with a postulated barrier to recombination of electrons and holes. Data were not available to check this latter prediction and future experiments are suggested. An implication of the model is that the PME effect is due to photons which are absorbed within a distance less than the recombination length from the electrodes.

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