Intervalley-Scattering Selection Rules in III-V Semiconductors

Joseph L. Birman; Melvin Lax; Rodney Loudon

doi:10.1103/PhysRev.145.620

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Intervalley-Scattering Selection Rules in III-V Semiconductors

Joseph L. Birman^*

Melvin Lax

Rodney Loudon^†

New York University, University Heights, New York, New York

Bell Telephone Laboratories, Murray Hill, New Jersey

Royal Radar Establishment, Malvern, England

^*Partially supported by the U. S. Army Research Office (Durham) and the Aerospace Research Laboratories, Office of Aerospace Research, Wright-Patterson Air Force Base, Ohio.
^†Present address: Bell Telephone Laboratories, Murray Hill, New Jersey.

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Phys. Rev. 145, 620 – Published 13 May, 1966

DOI: https://doi.org/10.1103/PhysRev.145.620

Abstract

Selection rules are presented for intervalley scattering between the lowest conduction-band minima at $Γ$ , $X$ , and $L$ in the Brillouin zone of a III-V semiconductor. These selection rules are required for theories of the Gunn effect. The two most important crystals experimentally are GaAs, where longitudinal optic phonons cause the intervalley scattering, and InP, where longitudinal acoustic phonons produce the scattering.

References (15)

E. Conwell (private communication) P. N. Butcher and W. Fawcett, Proc. Phys. Soc. (London) 86, 1205 (1965)
J. L. Birman, Phys. Rev. 127, 1093 (1962)
R. J. Elliott and R. Loudon, J. Phys. Chem. Solids 15, 146 (1960)
M. Lax and J. J. Hopfield, Phys. Rev. 124, 115 (1961)
M. Lax, in Proceedings of the International Conference on the Physics of Semiconductors, Exeter (The Institute of Physics and The Physical Society, London, 1962), p. 395
M. Lax, Phys. Rev. 138, A793 (1965)
R. H. Parmenter, Phys. Rev. 100, 573 (1955) G. F. Koster, J. O. Dimmock, R. G. Wheeler, and H. Statz in Properties of the Thirty-Two Point Groups (MIT Press, Cambridge, Massachusetts, 1963)
G. Dresselhaus, Phys. Rev. 100, 580 (1955)
C. Hilsum, in Proceedings of the International Conference on the Physics of Semiconductors, Paris, 1964 (Dunod Cie., Paris, 1964), p. 1127
F. Bassani and M. Yoshimine, Phys. Rev. 130, 20 (1963)
J. C. Phillips (private communication)
J. L. Birman, Phys. Rev. 131, 1489 (1963)
Omitted endnote
M. Born and K. Huang, Dynamical Theory of Crystal Lattices (Clarendon Press, Oxford, 1954), Secs. 7 and 8
G. F. Karavaev, Fiz. Tverd. Tela 6, 3676 (1964) [English transl.: Soviet Phys.—Solid State 6, 2943 (1965)]

[c1] E. Conwell (private communication) P. N. Butcher and W. Fawcett, Proc. Phys. Soc. (London) 86, 1205 (1965)

[c2] J. L. Birman, Phys. Rev. 127, 1093 (1962)

[c3] R. J. Elliott and R. Loudon, J. Phys. Chem. Solids 15, 146 (1960)

[c4] M. Lax and J. J. Hopfield, Phys. Rev. 124, 115 (1961)

[c5] M. Lax, in Proceedings of the International Conference on the Physics of Semiconductors, Exeter (The Institute of Physics and The Physical Society, London, 1962), p. 395

[c6] M. Lax, Phys. Rev. 138, A793 (1965)

[c7] R. H. Parmenter, Phys. Rev. 100, 573 (1955) G. F. Koster, J. O. Dimmock, R. G. Wheeler, and H. Statz in Properties of the Thirty-Two Point Groups (MIT Press, Cambridge, Massachusetts, 1963)

[c8] G. Dresselhaus, Phys. Rev. 100, 580 (1955)

[c9] C. Hilsum, in Proceedings of the International Conference on the Physics of Semiconductors, Paris, 1964 (Dunod Cie., Paris, 1964), p. 1127

[c10] F. Bassani and M. Yoshimine, Phys. Rev. 130, 20 (1963)

[c11] J. C. Phillips (private communication)

[c12] J. L. Birman, Phys. Rev. 131, 1489 (1963)

[c13] Omitted endnote

[c14] M. Born and K. Huang, Dynamical Theory of Crystal Lattices (Clarendon Press, Oxford, 1954), Secs. 7 and 8

[c15] G. F. Karavaev, Fiz. Tverd. Tela 6, 3676 (1964) [English transl.: Soviet Phys.—Solid State 6, 2943 (1965)]

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Intervalley-Scattering Selection Rules in III-V Semiconductors

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