Low-Temperature Structural Transformation in <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">V</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span>Si

B. W. Batterman; C. S. Barrett

doi:10.1103/PhysRev.145.296

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Low-Temperature Structural Transformation in $V_{3}$ Si

B. W. Batterman^* and C. S. Barrett^†

Bell Telephone Laboratories, Murray Hill, New Jersey

^*Present address: Cornell University, Bard Hall, Ithaca, New York.
^†Experiments performed while this author was on temporary leave from the Institute for the Study of Metals, the University of Chicago.

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Phys. Rev. 145, 296 – Published 6 May, 1966

DOI: https://doi.org/10.1103/PhysRev.145.296

Abstract

This paper discusses in detail the experimental observations on the low-temperature martensitic-like transformation of the compound superconductor $V_{3}$ Si. Evidence is presented showing that the transformation from the high-temperature cubic $β$ -tungsten phase to a tetragonal structure occurs at temperatures above the superconducting transition $T_{c} (17.0 ° K)$ . The detailed behavior of the transformation can vary between specimens, most probably because of deviations from exact stoichiometry. In high-resistance-ratio specimens, the transformation to tetragonal is complete at $T_{m} = 21.0 \pm 0.5 °$ K with a $\frac{c}{a}$ ratio increasing continuously from unity and reaching a maximum value of 1.0024 within 0.1°K of $T_{c}$ . The volume of the unit cell remains constant to better than one or two parts in $10^{4}$ in both the cubic and tetragonal phases below 30°K. No further change in $\frac{c}{a}$ occurs as the temperature is lowered, and hysteresis effects are never observed. Evidence is presented which leads to the conclusion that the transformation is of second order. Our results together with Testardi's ultrasonic measurements imply that the transformation is a result of a general softening of the lattice as a temperature is lowered, and in particular is triggered at $T_{m}$ by the near-vanishing of the restoring force for shear in a [ $1 \bar{1} 0$ ] direction on a (110) plane. The structural transformation is not necessarily a precursor of superconductivity, but it is most probably the large temperature dependence of the elastic properties that leads to both phenomena.

References (10)

B. W. Batterman and C. S. Barrett, Phys. Rev. Letters 13, 390 (1964)
C. G. Shull, MIT Annual Report—Research in Materials Science 1963-1964 (unpublished)
W. L. Bond, Acta Cryst. 13, 814 (1960)
J. S. Bowles, C. S. Barrett, and L. Guttman, Trans. AIME 188, 1478 (1950) Z. S. Basinski and J. W. Christian, Acta Met. 2, 148 (1954)
E. S. Greiner and H. Mason, Jr., J. Appl. Phys. 35, 3058 (1964)
C. Shull and A. Wedgewood (private communication)
Omitted endnote
M. J. Goringe and V. Valdrè, Phys. Rev. Letters 14, 823 (1965)
L. R. Testardi, T. B. Bateman, W. A. Reed, and V. G. Chirba, Phys. Rev. Letters 15, 250 (1965)
J. E. Kunzler, J. P. Maita, E. J. Ryder, H. J. Levinstein, and F. S. L. Hsu, Bull. Am. Phys. Soc. 10, 319 (1965)

[c1] B. W. Batterman and C. S. Barrett, Phys. Rev. Letters 13, 390 (1964)

[c2] C. G. Shull, MIT Annual Report—Research in Materials Science 1963-1964 (unpublished)

[c3] W. L. Bond, Acta Cryst. 13, 814 (1960)

[c4] J. S. Bowles, C. S. Barrett, and L. Guttman, Trans. AIME 188, 1478 (1950) Z. S. Basinski and J. W. Christian, Acta Met. 2, 148 (1954)

[c5] E. S. Greiner and H. Mason, Jr., J. Appl. Phys. 35, 3058 (1964)

[c6] C. Shull and A. Wedgewood (private communication)

[c7] Omitted endnote

[c8] M. J. Goringe and V. Valdrè, Phys. Rev. Letters 14, 823 (1965)

[c9] L. R. Testardi, T. B. Bateman, W. A. Reed, and V. G. Chirba, Phys. Rev. Letters 15, 250 (1965)

[c10] J. E. Kunzler, J. P. Maita, E. J. Ryder, H. J. Levinstein, and F. S. L. Hsu, Bull. Am. Phys. Soc. 10, 319 (1965)

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Low-Temperature Structural Transformation in $V_{3}$ Si

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Low-Temperature Structural Transformation in V3Si

Abstract

References (10)

Low-Temperature Structural Transformation in $V_{3}$ Si