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Ambipolar Diffusion in an Isothermal Oxygen Plasma at Elevated Temperatures

Michael H. Mentzoni

  • Applied Research Laboratory, Sylvania Electronic Systems, Waltham, Massachusetts

Phys. Rev. 134, A80 – Published 6 April, 1964

DOI: https://doi.org/10.1103/PhysRev.134.A80

Abstract

Electron removal in an afterglow discharge in oxygen was measured using microwave diagnostic techniques. For pressures below 1 mm Hg it was found that ambipolar diffusion was the principal loss process in the late afterglow which, by microwave radiation temperature measurements, was proven to be isothermal at the ambient gas temperature. A marked difference in the rare of diffusion for the low- and high-current discharge afterglow at room temperature was demonstrated with Dap values equal to 110±10 and 216±20 cm2 sec1, respectively. The identity of the ions leading to the higher value is not well established since it is not clear how O+ ions could be predominant in the high-current case. It is perhaps more probable that the ion O3+ is responsible based on some reported mass spectrometric studies of the oxygen afterglow. The ions responsible for the lower Dap value, however, are most probably O2+ judging from previously published results. These ions display a strongly temperature-dependent diffusion rate in the range 300 to 900°K which on the mobility versus temperature plot resulted in a maximum of about 5.0 cm2 sec1 V1 around 600°K after a steep climb from the value 2.8 cm2 sec1 V1 at T=300°K; between 600 and 900°K the decline in mobility is only slight. This behavior is discussed in terms of ion-molecule force fields and charge transfer.

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