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Energy for Electron-Hole Pair Generation in Silicon by Particles
Phys. Rev. 131, 134 – Published 1 July, 1963
DOI: https://doi.org/10.1103/PhysRev.131.134
Abstract
The mean energy for electron-hole pair generation in silicon by particles has been measured at different temperatures. For a given temperature, this value has been obtained by extrapolating to infinite collecting electric field the actual data at various finite fields. The experimental values are reported as a function of the forbidden energy gap, and compared with a theoretical expression due to Shockley.
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