Hall Mobility of Carriers in Impure Nondegenerate Semiconductors

M. S. Sodha; P. C. Eastman

doi:10.1103/PhysRev.112.44

Access by Xinjiang University

Hall Mobility of Carriers in Impure Nondegenerate Semiconductors

M. S. Sodha^* and P. C. Eastman

Department of Physics, University of British Columbia, Vancouver, Canada

^*Now at Aerophysics Laboratory, Armour Research Foundation, Chicago, Illinois.

PDF

Phys. Rev. 112, 44 – Published 1 October, 1958

DOI: https://doi.org/10.1103/PhysRev.112.44

Abstract

A discussion is given of the Hall mobility of carriers in nondegenerate semiconductors, taking into account scattering by lattice vibrations, ionized impurities, and neutral impurities. The study is confined to the case of low temperatures and high impurity concentrations, for which Sclar's theory of ionized impurity scattering is valid.

References (4)

M. S. Sodha and P. C. Eastman, Phys. Rev. 108, 1373 (1957)
N. Sclar, Phys. Rev. 104, 1548 (1956)
C. Erginsoy, Phys. Rev. 79, 1013 (1950)
W. Shockley, Electrons and Holes in Semiconductors (D. Van Nostrand Company, Inc., Princeton, New Jersey, 1950)

[c1] M. S. Sodha and P. C. Eastman, Phys. Rev. 108, 1373 (1957)

[c2] N. Sclar, Phys. Rev. 104, 1548 (1956)

[c3] C. Erginsoy, Phys. Rev. 79, 1013 (1950)

[c4] W. Shockley, Electrons and Holes in Semiconductors (D. Van Nostrand Company, Inc., Princeton, New Jersey, 1950)

Physical Review Journals Archive

Export citation

Export citation

Hall Mobility of Carriers in Impure Nondegenerate Semiconductors

Abstract

References (4)

Outline

Information

Filter

Filter

Article Lookup

Enter a citation