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Thermal Expansion of Some Crystals with the Diamond Structure

Bell Telephone Laboratories, Murray Hill, New Jersey

Phys. Rev. 112, 136 – Published 1 October, 1958Erratum Phys. Rev. 112, 2139 (1958)

DOI: https://doi.org/10.1103/PhysRev.112.136

Abstract

The linear coefficient of thermal expansion of silicon, germanium, and indium antimonide has been measured in the range 4.2°K-300°K using an interferometric method. In the cases of silicon and germanium, these values are used to calculate the variation in Grüneisen's factor $γ$ with temperature and the result is compared with the predictions of T. H. K. Barron. Silicon and indium antimonide have negative values for $γ$ at low temperatures and some of the requirements for a structure to behave in this manner are suggested, namely, fourfold coordination in the lattice, covalent bonding, and openness of structure.

Erratum

Thermal Expansion of Some Crystals with the Diamond Structure

D. F. Gibbons

Phys. Rev. 112, 2139 (1958)

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