- Access by Xinjiang University
Study of Noise in Semiconductor Filaments
Phys. Rev. 103, 72 – Published 1 July, 1956
DOI: https://doi.org/10.1103/PhysRev.103.72
Abstract
A theory is devised for the generation of noise in semiconductor filaments, involving the diffusion of impurity atoms along the surface of the sample and along edge dislocations within the bulk. A set of six experiments is described which tends to corroborate this theory.
References (21)
- A. van der Ziel, Physica 16, 359 (1950)
- H. C. Montgomery, Bell System Tech. J. 31, 950 (1952)
- W. Shockley, Electrons and Holes in Semiconductors (D. Van Nostrand Company, New York, 1950), pp. 342-346
- Leon Bess, Phys. Rev. 91, 1569 (1953)
Omitted endnote
- Leon Bess, Technical Memorandum No. 59 of Massachusetts Institute of Technology (unpublished)
- S. A. Kulin and A. D. Kurtz, Acta Metallurgica 2, 354 (1954)
- Vogel, Pfann, Corey, and Thomas, Phys. Rev. 90, 489 (1953)
- S. G. Ellis, J. Appl. Phys. 26, 1140 (1955)
- A. H. Cottrell and B. A. Bilby, Proc. Roy. Soc. (London) A62, 49 (1949)
- A. A. Hendrickson and E. S. Machlin, J. Metals 6, 1035 (1954)
- R. M. Barrer, Diffusion in and Through Solids (The Macmillan Company, New York, 1941), p. 373
- B. F. Rollin and I. M. Templeton, Proc. Phys. Soc. (London) B66, 259 (1953)
- K. M. van Vliet et al., Physica 20, 481 (1954)
- H. A. Gebbie and appeared in the Group 35 Lincoln Laboratory Quarterly Progress Report of February 1, 1955 (unpublished)
- Maple, Bess, and Gebbie, J. Appl. Phys. 26, 490 (1955)
- A. van der Ziel, J. Appl. Phys. 24, 1063 (1953)
Omitted endnote
- L. Bess, J. Appl. Phys. 26, 1377 (1955)
- A. H. Cottrell, Dislocation and Plastic Flow in Crystals (Oxford University Press, Oxford, 1953), p. 29
- J. J. Brophy [Phys. Rev. 100, 1261 (1955)]